3300V高压4H-SiC结势垒肖特基二极管器件的研制  

Development of High voltage 4H-SiC Junction Barrier Schottky Diode with 3 300 V Blocking voltage

作　　者：彭朝阳[1] 白云[1] 申华军[1] 吴煜东 高云斌 刘新宇[1] 

机构地区：[1]中国科学院微电子研究所,北京100029 [2]新型功率半导体器件国家重点实验室,湖南株洲412001

出　　处：《大功率变流技术》2016年第5期46-50,共5页HIGH POWER CONVERTER TECHNOLOGY

基　　金：国家科技重大专项02专项(2013ZX02305001)

摘　　要：为满足轨道交通电力牵引应用对高压SiC二极管器件的需求,对4H-SiC器件有源区采用了不同JBS栅条参数设计,并通过TCAD仿真对比分析了栅条参数对器件性能的影响;器件终端结构采用经过优化的35个场限环结构设计;最后采用Ti作为肖特基金属,制备获得的3 300 V/15 A 4H-SiC JBS器件势垒高度约为1.19 e V、击穿电压高于3 300 V。这是国内首次报道的3 300 V/15 A规格SiC JBS器件产品。通过实验测得:器件的特征导通电阻为7.6~19 mΩ·cm^2;室温下,反向偏压达到3 300 V时,器件的漏电流仅为0.3μA,雪崩击穿电压达到3 800 V。In order to meet the demands of high-voltage SiC diodes in railway traction, different gate parameters were applied to the active area of 4H-SiC device and their effects on device performance were comparatively analyzed through TCAD simulation. The junction termination extension（JTE） structures used optimized 35 rings. With Ti as Schottky contact metal, the fabricated 3 300 V/15 A SiC JBS device obtained a Shcottky barrier of 1.19 e V and the bl℃king voltage was above 3 300 V. According to the device＇s characteristic curves, the specific on resistance was calculated to be 7.6 mΩ？cm2 and 19 mΩ·cm2 respectively. This is the first reported 3 300 V/15 A type SiC JBS device fabricated in China. Experimental results show that the diode has a bl℃king voltage up to 3 300 V with low leakage current of 0.3 μA at room temperature, and the avalanche breakdown voltage is 3 800 V.

关 键 词：击穿电压 4H-SIC 结势垒肖特基二极管 

分 类 号：TN304.24[电子电信—物理电子学]