300mm硅晶圆粗抛速率优化  

Optimization of the Fast Polishing Removal Rate for 300 mm Silicon Wafers

作　　者：张文倩[1,2] 刘玉岭[1,2] 王辰伟[1,2] 洪姣[1,2] 王娟[1,2] 栾晓东[1,2] 

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]天津市电子材料与器件重点实验室,天津300130

出　　处：《微纳电子技术》2016年第11期767-772,共6页Micronanoelectronic Technology

基　　金：国家中长期科技发展规划02科技重大专项资助项目(2009ZX02308);国家自然科学基金资助项目(61504037);河北省研究生创新资助项目(220056);河北省青年自然科学基金资助项目(F2015202267)

摘　　要：针对直径300 mm硅晶圆的粗抛,研究了不同稀释比例的FA/O型硅片粗抛液对硅去除速率的影响,发现按1∶30的体积比稀释时硅片背面去除速率偏低。通过深入分析1∶30的稀释体积比下温度与硅去除速率的关系,对抛光液和工艺进行调整优化,提高了硅片去除速率。优化结果表明,硅晶圆背面和正面抛光的启动温度和最高温度均上升了约1℃,同时5.5 min内背面去除量由3.34μm增至3.67μm,15 min内正面去除量由10.075μm提高到12.285μm,均满足工业要求。进而对抛光液循环使用寿命进行了验证,结果表明FA/O型硅粗抛液使用寿命可达300 min,有利于降低生产成本。The effect of different dilution ratios of the FA/O fast polishing slurry on the removal rate for the fast polishing of 300 mm silicon wafers was studied.It is found that the removal rate of the Si backside is on the low side at the dilution volume ratio of 1∶30.After in-depth analysis of the relationship between the removal rate and temperature for the dilution volume ratio of 1∶30,the removal rate of the Si was improved by adjusting and optimizing the slurry and process.The results show that the start and maximum temperatures of both sides rise about 1 ℃,meanwhile,the removal amount of the wafer back increases from3.34μm to 3.67μm in5.5 min,and the removal amount of the wafer front increases from10.075μm to 12.285μm in 15 min,which meet industrial requirements,respectively.After testing the lifetime of the slurry,it is found that the lifetime of the FA/O fast polishing slurry can reach to 300 min,which may decrease the production costs.

关 键 词：硅晶圆 化学机械抛光(CMP) 粗抛液 温度 使用寿命 

分 类 号：TN305.2[电子电信—物理电子学]