氢化非晶硅薄膜的制备与工艺参数优化  

Preparation and Process Parameters Optimization of Hydrogenated Amorphous Silicon Thin Film

作　　者：朱永航 刘一剑[1] 黄霞[1] 黄惠良[1] 

机构地区：[1]上海交通大学微纳电子学系光伏实验室,上海200240

出　　处：《微电子学》2016年第5期706-710,共5页Microelectronics

基　　金：国家高技术研究发展(863)计划基金资助项目((BC3400026)

摘　　要：采用间接型射频等离子体增强化学气相沉积方法,通过改变H_2/SiH_4气流量比、工艺功率和工艺压强,制备出了氢化非晶硅薄膜。研究了H_2/SiH_4气流量比、工艺功率以及工艺压强对非晶硅薄膜光学特性的影响。实验结果表明,该方法可以制备出氢化非晶硅薄膜,且通过改变实验条件,可以改变薄膜微观结构及成分;随着H_2/SiH_4气流量比的增加,SiH化合物含量增加,多氢化合物含量降低;适当增加射频功率,可以提高薄膜表面的均匀性,同时,功率的增加会使氢含量增加;此外,薄膜表面氢含量随工艺气压的降低而减小。A kind of hydrogenated amorphous silicon thin film was prepared with an indirect ratio frequency plasma enhanced chemical vapor deposition method by changing H_2/SiH_4 gas flow ratio,procedure power and procedure pressure respectively.The effects of H_2/SiH_4 gas flow ratio,procedure power and procedure pressure on a-Si∶H thin film optical properties were also studied.The results showed that a-Si∶H thin film could be prepared by this method.The film microstructure and compositions changed when the experimental conditions changed.With the H_2/SiH_4 gas flow ratio increasing,SiH compounds increased and poly-hydrides gradually reduced.Thin film uniformity and H content could be improved by increasing the RF power properly.In addition,H content on thin film surface decreased with the decreasing of procedure pressure.

关 键 词：氢化非晶硅薄膜 间接型射频等离子体 微观结构 H含量 H2/SiH4气流量比 工艺功率 工艺压强 

分 类 号：TN304.05[电子电信—物理电子学]