氮化镓/蓝宝石异质结构中极性的研究(英文)  

Investigation on Polarity of GaN/Al_2O_3Heterostructure Grown by MOVPE

作　　者：韩培德[1] 刘祥林[1] 王晓晖[1] 汪度[1] 陆大成[1] 王占国[1] 

机构地区：[1]中国科学院半导体研究所半导体材料科学开放实验室,北京100083

出　　处：《发光学报》2001年第S1期33-37,共5页Chinese Journal of Luminescence

基　　金：国家自然科学基金资助项目 ( 6 0 0 86 0 0 1);国家重点基础研究项目专项支持 (G2 0 0 0 0 6 83)~~

摘　　要：用低压金属有机气相外延方法设备在蓝宝石衬底两个相反取向的C面上同时生长六方相氮化镓薄膜 ,对此进行了扫描电子显微镜、透射电子显微镜的分析和研究。发现当衬底表面是向籽晶面时 ,生长的六方相氮化镓薄膜为 ( 0 0 0 1 )取向 ,而当衬底表面是背籽晶面时 ,生长的氮化镓薄膜则为 ( 0 0 0 1 )取向。GaN films grown in pairs on two opposite c faces of Al 2O 3 substrate by low pressure metal organic vapor phase epitaxy (MOVPE) have been studied by sc anning electron microscopy (SEM) and converged beam electron diffraction (CBED). It is found that the GaN film on the c Al 2O 3 whose c face is forward to its c rystal seed has polarity, and the other film on the c Al 2O 3 whose c face is backward to its crystal seed has [000[KG-3]1

关 键 词：极性 GaN/Al2O3 MOVPE 

分 类 号：O482.31[理学—固体物理]