GaN基纳米阵列LED器件制备及发光特性  

Fabrication and Luminescent Property of GaN Based Light-emitting Diodes with Array Nanorods Structure

作　　者：智婷[1] 陶涛[1] 刘斌[1] 庄喆[1] 谢自力[1] 陈鹏[1] 张荣[1] 郑有炓[1] 

机构地区：[1]南京大学电子科学与工程学院,江苏南京210093

出　　处：《发光学报》2016年第12期1538-1544,共7页Chinese Journal of Luminescence

基　　金：国家重点研发计划(2016YFB0400602;2016YFB0400100);国家高技术研究发展规划(2014AA032605;2015AA033305);国家自然科学基金(61605071;61674076;61274003;61422401;51461135002;61334009);江苏省自然科学基金(BY2013077;BK20141320;BE2015111);固态照明与节能电子学协同创新中心项目;江苏省重点学科资助计划;南京大学扬州光电研究院研发基金资助项目

摘　　要：为了降低GaN材料中因应变诱导的量子斯托克斯效应,增加器件有源区内的电子-空穴波函数在实空间的交叠从而提高GaN基LEDs的发光效率,采用紫外软压印技术制备了均匀的周期性纳米柱阵列结构,结合常规LED器件微加工技术获得了In GaN/GaN基蓝光与绿光纳米阵列LED器件并对其进行了表征分析。结果表明:纳米柱阵列LED器件具有均匀的发光和稳定的光电性能。纳米结构不仅有效缓解了量子阱中的应力积累(弛豫度~70%),提高了器件的辐射复合几率和出光效率,同时结合纳米柱侧壁的化学钝化处理进一步降低了器件有源区的缺陷密度,显著降低了LED器件的漏电流(~10-7),最终提高了器件的发光效率。In order to improve the emission efficiency of light-emitting diodes,reduce the quantumconfined Stark effect induced by stain,and increase the wave function overlap of electron and holes,In GaN / GaN based LEDs with array nanorods structure were fabricated by utilization of nanoimprint lithography（ NIL） and nano-fabrication processes. It demonstrates the uniform and bight emission,lower leakage current（ ~ 10^（-7））,optimized turn on voltage（ ~ 3 V）. The uniform electroluminescence（ EL） of In GaN / GaN MQW NR arrays has been successfully achieved as well,with a slight blue shift compared to that of the planar devices due to the lower quantum-confined Stark effect. It is confirmed that the defects and dislocations density is lower,strain accumulated in the film is released,quantum-confined Stark effect is reduced（ relaxed degree ~ 70%）,and the wave function overlap of electron and holes is increased and light extraction efficiency is improved.

关 键 词：INGAN/GAN 发光二极管 纳米柱 纳米压印 

分 类 号：TP394.1[自动化与计算机技术—计算机应用技术] TN383.1[自动化与计算机技术—计算机科学与技术]