65nm反相器单粒子瞬态脉宽分布的多峰值现象  

The multi-peak phenomenon in 65 nm inverters single event transient pulse width distribution

作　　者：刘家齐[1] 赵元富[1,2] 王亮[1] 郑宏超[1] 舒磊[2] 李同德[1] Liu Jiaqi Zhao Yuanfu Wang Liang Zheng Hongchao Shu Lei Li Tongde(Beijing Microelectronics Technology Institute, Beijing 100076, China Harbin Institute of Technology, Harbin 150001 , China)

机构地区：[1]北京微电子技术研究所,北京100076 [2]哈尔滨工业大学,黑龙江哈尔滨150001

出　　处：《电子技术应用》2017年第1期20-23,共4页Application of Electronic Technique

摘　　要：基于65 nm工艺下单粒子瞬态脉宽检测电路,在重离子辐照下,对目标单元单粒子瞬态脉宽进行了测试。针对实验结果中单粒子瞬态脉宽分布出现多峰的现象进行了分析。详细对比了反相器多峰现象与LET值、温度、阈值电压间的关系。通过TCAD仿真分析了多峰现象的原因,即PMOS由于寄生双极效应,在高LET粒子攻击下产生的瞬态脉冲脉宽大于粒子攻击NMOS产生的瞬态脉冲脉宽。高温条件会使得寄生双极效应更加严重,因此在高温条件下脉宽分布的多峰现象更加明显。Single Event Transient （SET） pulse widths of 65 nm inverters are measured under heavy ion irradiation. The multi-peak phenomenon of SET pulse width distribution found in the experiment is analyzed. The influence of Linear Energy Transfer（LET）, temperature and threshold voltage on the pulse width multi-peak in inverter chains are discussed in detail. TCAD simulation is used to analyze the cause of multi-peak phenomenon and the parasitic bipolar effect in PMOS is believed the reason. Owing to the parasitic bipolar effect, the pulse width of PMOS under high LET particles increases while the pulse width of NMOS changes little. Therefore the distribution of pulse width shows multi-peak. Parasitic bipolar effect intensifies at high-temperature, so the multi- peak of pulse width distribution at high-temperature tends to be more obvious.

关 键 词：单粒子瞬态 多峰现象 65 nm反相器 

分 类 号：TN432[电子电信—微电子学与固体电子学]