一种200V垂直型恒流二极管的优化设计  被引量:3

Optimal Design of a 200V Vertical Current Regulator Diode

在线阅读下载全文

作  者:梁涛[1,2] 张康[1] 何逸涛[1] 乔明[1] 张波[1] LIANG Tao ZHANG Kang HE Yitao QIAO Ming ZHANG Bo(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China Changhong Electric Co. , Ltd. , Mianyang, Sichuan 621000, P. R. China)

机构地区:[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054 [2]四川长虹电器股份有限公司,四川绵阳621000

出  处:《微电子学》2016年第6期822-825,共4页Microelectronics

基  金:国家自然科学基金资助项目(61376080);广东省自然科学基金资助项目(2014A030313736)

摘  要:恒流二极管具有很高的动态阻抗、很好的恒流性能以及负温度特性,被广泛应用于恒流源、稳压源、放大器以及电子仪器的保护电路中。设计了一种200V垂直耗尽型恒流二极管,对其电学参数进行了仿真,优化了外延厚度与浓度、沟道浓度、JFET区长度、栅氧层厚度等参数,并对终端结构进行了设计。最终成功设计出一个夹断电压小于5V,击穿电压约为250V,电流约为1.5×10^(-5)A/μm,恒流特性良好的恒流二极管。Current regulator diodes(CRD)have been widely used in constant current sources,voltage regulators,amplifiers and protection circuits in electronic instruments due to the intrinsic advantages,like higher dynamic impedance,good constant current characteristic and negative temperature property.A novel 200 Vvertical CRD was proposed and its electrical parameters had been simulated.The device parameters,such as the thicknesses and the doping of epitaxial layer,the doping of channel,the length of JFET region,and the thickness of gate oxide layer were discussed and optimized.The terminal structure was designed.Finally,the vertical CRD had been realized with a pinch off voltage less than 5V,a breakdown voltage of 250 V,a current of 1.5×10-5 A/μm,which had good constant current characteristics.

关 键 词:恒流二极管 恒流特性 击穿电压 夹断电压 

分 类 号:TN432[电子电信—微电子学与固体电子学]

 

参考文献:

正在载入数据...

 

二级参考文献:

正在载入数据...

 

耦合文献:

正在载入数据...

 

引证文献:

正在载入数据...

 

二级引证文献:

正在载入数据...

 

同被引文献:

正在载入数据...

 

相关期刊文献:

正在载入数据...

相关的主题
相关的作者对象
相关的机构对象