降温速率对升级冶金硅定向凝固生长多晶硅少子寿命的影响  

Influence of Cooling Rate on the Minority Carrier Lifetime of Multicrystalline Silicon Grown with Metallurgical Grade Silicon Feedback by Directional Solidification

作　　者：刘志辉[1] 罗玉峰[1,2] 龚洪勇[3,4] 饶森林 张发云[3,4] 胡云[3,4] 

机构地区：[1]南昌大学机电工程学院,南昌330031 [2]华东交通大学,南昌330013 [3]新余学院新能源科学与工程学院,新余338004 [4]江西省高等学校硅材料重点实验室,新余338004

出　　处：《人工晶体学报》2017年第1期13-17,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(51164033;51664047;51561022;61306084);江西省自然科学基金(20132BAB206021);江西省高等学校科技落地计划(KJLD12050);江西省教育厅科学技术研究项目(GJJ151220;11739;12748;161199;161200)

摘　　要：对经过前期提纯的冶金级硅料进行一次性定向凝固生长多晶硅铸锭,研究了长晶阶段降温速率对多晶硅少子寿命的影响。结果显示降温速率越低,获得多晶硅少子寿命越高,但降温速率低到一定程度时,少子寿命反而会降低。通过测试生长多晶硅硅锭曲率半径、晶体结构等数据,分析了该现象的产生原因。这将有助于升级冶金硅一次性定向凝固生长多晶硅铸锭的生产应用。According to multicrystalline silicon（mc-Si） ingots cast by one-step directional solidification growth with the pre-purification metallurgical grade silicon feedback,the effect of cooling rate on the minority carrier lifetime of mc-Si ingots can be known. In the study,using a lower cooling rate during growth process of mc-Si ingots,a higher lifetime on the mc-Si ingots can be obtained. But when the cooling rate is low to a certain degree,the minority carrier lifetime of mc-Si ingots reduces. The cause of the phenomenon is analyzed by measuring the curvature radius and the crystal structure of the grown mcSi ingot. This phenomenon can be used to guide the production applications of metallurgical route with one-step directional solidification growth of mc-Si ingots.

关 键 词：多晶硅 冶金硅 定向凝固 降温速率 少子寿命 

分 类 号：O78[理学—晶体学]