化学气相沉积法制备单层石墨烯的优化  

Preparation of Single Layer Graphenes via an Optimized CVD Method

作　　者：毕瑞可 张杰[1] 吴玉玲[1] 曾毅波[1] 张为中[2] 郭航[1] 

机构地区：[1]厦门大学萨本栋微米纳米科学技术研究院,福建厦门361005 [2]中国电信集团股份有限公司新疆分公司,乌鲁木齐830011

出　　处：《微纳电子技术》2017年第3期181-187,共7页Micronanoelectronic Technology

基　　金：厦门市科技项目(3502Z20143003)

摘　　要：作为碳原子家族的最新成员,二维结构的石墨烯具备优异的物理化学性质和广阔的应用前景,成为新材料研究领域的热点研究对象。对化学气相沉积(CVD)法进行了优化,成功制备得到了高质量的单层石墨烯。优化后的实验工艺为:首先对铜箔进行化学抛光和退火预处理;然后将预处理后的铜箔加工成荷包状;氢气(H2)氛围下,以甲烷(CH4)为碳源,对石墨烯进行化学气相沉积;当甲烷和氢气体积流量分别为10 cm3/min和20 cm3/min时,在1 030℃条件下生长20 min制备得到最终样品。扫描电子显微镜(SEM)和激光喇曼光谱表征的结果显示:该方法制备的样品为大面积连续的单层石墨烯。As the latest member of the carbon family,the graphene with two-dimensional structure becomes a hot research subject in the new material research field due to its outstanding physical and chemical properties and wide application prospect.The single layer graphene with high quality was prepared successfully by the optimized chemical vapor deposition（CVD）method.In the optimized experiment process,the chemical polishing and annealing pre-treatment of the Cu foil were carried out firstly,then the pre-treated Cu foil was fabricated into a cavity shape;the CVD growth of the graphene was conducted with the methane（CH_4）as the carbon source under the hydrogen（H_2）atmosphere.The final samples were prepared at 1 030 ℃for 20 min with the CH_4 and H_2volume flow rates of 10 cm^3/min and 20 cm^3/min,respectively.The results characterized by the scanning electron microscope（SEM）and Raman spectroscopy show that the single layer graphene with high quality and large area can be obtained via this optimized CVD procedure.

关 键 词：石墨烯 化学气相沉积(CVD) 表征 单层 大面积 

分 类 号：TN304.18[电子电信—物理电子学]