NaClO和FA/OⅠ螯合剂对Ru和Cu的CMP影响  

Effects of NaClO and FA/OⅠ Chelating Agents on the CMP of Cu and Ru

作　　者：郑环[1,2] 周建伟[1,2] 王辰伟[1,2] 张乐[1,2] 王仲杰[1,2] 杜义琛 

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]天津市电子材料与器件重点实验室,天津300130

出　　处：《微纳电子技术》2017年第3期202-207,212,共7页Micronanoelectronic Technology

基　　金：国家中长期科技发展规划02科技重大专项资助项目(2016ZX02301003-004-007);国家科技重大专项子课题河北省青年自然科学基金资助项目(F2015202267);河北省教育厅基金资助项目(QN2014208);河北省自然科学基金资助项目(E2013202247);河北工业大学优秀青年科技创新基金资助项目(2015007)

摘　　要：钌作为下一代14 nm超大规模集成电路阻挡层新材料,有着重要的研究意义,然而对阻挡层进行化学机械抛光时,由于Ru和Cu的化学性质与硬度均不相同,Ru和Cu很难达到适合的速率选择比。研究了在以NaClO为氧化剂时,磨料质量分数、pH值、NaClO溶液体积分数、FA/OⅠ螯合剂体积分数以及抗蚀剂BTA对Ru化学机械抛光的影响,同时研究了NaClO和FA/OⅠ螯合剂的协同作用对Ru和Cu的去除速率和电偶腐蚀的影响。实验结果表明,以NaClO为氧化剂时,随着pH值升高,Ru去除速率和静态腐蚀速率均随之升高,NaClO能够大幅度提高Ru和Cu的去除速率,FA/OⅠ螯合剂的加入能够小范围提高Ru和Cu的去除速率,同时FA/OⅠ螯合剂可以减缓Ru和Cu之间的电偶腐蚀,最终通过调节抗蚀剂的质量浓度,可以实现Ru和Cu速率可控,达到合适的速率选择比。Ru has an important research significance as a barrier layer new material for the next generation 14 nm very large scale integrated circuits.However,during the chemical mechanical polishing（CMP）of the barrier layer,Ru and Cu are difficult to achieve a suitable rate selection ratio because the chemical properties and hardnesses of Ru and Cu are different.The effects of the abrasive mass fraction,pH value,NaClO solution volume fraction,FA/O I chelating agent volume fraction and resist BTA on the CMP of Ru were studied with NaClO as oxidant,and the effect of the synergistic action of NaClO and FA/O I chelating agent on the removal rate and galvanic corrosion of Ru and Cu was also studied.The experimental results show that with NaClO as oxidant,the removal rate and static corrosion rate of Ru increase with the increase of the pH vaule.NaClO can significantly improve the removal rates of Ru and Cu.The removal rates of Ru and Cu increase in a small range by adding FA/O I chelating agent,meanwhile the FA/O I chelating agent can reduce the galvanic corrosion between Ru and Cu.Finally,by adjusting the mass concentration of the resist,the removal rate of Ru and Cu can be controlled and the appropriate rate selection ratio can be achieved.

关 键 词：集成电路 新型阻挡层 RU 化学机械抛光(CMP) 次氯酸钠(NaClO) pH值 

分 类 号：TN305.2[电子电信—物理电子学]