基于再生长欧姆接触工艺的220 GHz InAlN/GaN场效应晶体管（英文）  

f_T=220 GHz InAlN/GaN HFETs with regrown ohmic contacts

作　　者：尹甲运[1] 吕元杰[1] 宋旭波[1] 谭鑫[1] 张志荣[1] 房玉龙[1] 冯志红[1] 蔡树军[1] 

机构地区：[1]河北半导体研究所专用集成电路国家级重点实验室,河北石家庄050051

出　　处：《红外与毫米波学报》2017年第1期6-9,34,共5页Journal of Infrared and Millimeter Waves

基　　金：Supported by the National Natural Science Foundation of China(61306113)

摘　　要：在蓝宝石衬底上研制了具有高电流增益截止频率(f_T)的InAlN/GaN异质结场效应晶体管(HFETs).基于MOCVD外延n+-GaN欧姆接触工艺实现了器件尺寸的缩小,有效源漏间距(Lsd)缩小至600 nm.此外,采用自对准工艺制备了50 nm直栅.由于器件尺寸的缩小,Vgs=1 V下器件最大饱和电流(I_(ds))达到2.11 A/mm,峰值跨导达到609 mS/mm.根据小信号测试结果,外推得到器件的fT和最大振荡频率(fmax)分别为220 GHz和48 GHz.据我们所知,该f_T值是目前国内InAlN/GaN HFETs器件报道的最高结果.Scaled InA1N/GaN heterostructure field-effect transistors （HFETs） with high unity current gain cut-off frequency （fr） on sapphire substrate were fabricated and characterized. In this device, scaled source-to-drain dis- tance （Lsd） of 600 nm was realized by metal organic chemical vapor deposition （MOCVD） based on regrow non- alloyed n ＋ -GaN Ohmic contacts. Moreover, a 50 nm rectangular gate was fabricated by self-aligned-gate technolo- gy. A high drain saturation current density （lds） of 2.11 A/mm @ Vgs = 1 V and a peak extrinsic transconduct- ance （gm） of 609 mS/mm were achieved in the InA1N/GaN HFETs. In addition, from the small-signal RF meas- urements, the values offT and maximum oscillation frequency （fmax） for the device with 50-nm rectangular gate were extrapolated to be 220 GHz and 48 GHz. To our best knowledge, the value offT is the best reported one for InAIN/GaN HFETs in China.

关 键 词：InA1N/GaN HFET FT 再生长n+-GaN欧姆接触 

分 类 号：TN385[电子电信—物理电子学]