张应变锗薄膜制备技术的研究进展  

Research Progress of Fabrication Techniques of Tensile Strained Ge Thin Films

作　　者：周志文[1] 李世国[1] 沈晓霞[1] 

机构地区：[1]深圳信息职业技术学院电子与通信学院,广东深圳518172

出　　处：《半导体技术》2017年第3期161-168,189,共9页Semiconductor Technology

基　　金：广东省高等学校优秀青年教师项目(Yq2014123)

摘　　要：由于与硅集成电路工艺兼容的张应变锗薄膜在光电器件如光电探测器、调制器,特别是发光器件中具有潜在的应用前景,使其得到了广泛关注。然而,在锗薄膜中引入可控的、大的张应变是个挑战。综述了张应变锗薄膜制备技术的研究进展,重点介绍了在锗薄膜中引入张应变的外延技术、应变转移技术、应变浓缩技术和机械应变技术的工艺流程和实验结果,并讨论了它们的优点和缺点。采用应变浓缩技术制备的厚度为350 nm的锗薄膜微桥的单轴张应变和微盘的双轴张应变分别达到了4.9%和1.9%,可将锗调制为直接带隙材料,适用于锗激光器的研制。Tensile strained Ge thin films which are compatible with Si integrated circuits technology have attracted great attention due to their potential applications in optoelectric devices such as photodetector,modulator,and especially light emitting devices. However, introducing a controllable and large tensile strain to Ge thin films is a challenge. The research progresses of fabrication techniques of tensilely strained Ge thin films are reviewed. The fabrication process flow and test results of various approaches including epitaxy technology,strain transfer technology,strain concentration technology and mechanical strain technology to apply tensile strain to Ge thin films are introduced,respectively. And the advantages and disadvantages of these techniques are discussed. The uniaxial tensile strain of micro-bridge and biaxial tensile strain of microdisk obtained by strain concentration method of Ge thin films with a thickness of 350 nm reach 4. 9% and 1. 9%,respectively. Such a large strain will adjust Ge into a direct bandgap material,which is suitable for the research and development of the Ge laser.

关 键 词：张应变 锗薄膜 外延 硅衬底 光电子 

分 类 号：TN304.11[电子电信—物理电子学]