用于FET的PECVD SiN_x掺杂MoS_2的有效性与可控性  

Effectiveness and Controllability of SiN_x-Doped MoS_2 by PECVD for FETs

作　　者：战俊[1,2] 粟雅娟[1] 罗军[1] 贾昆鹏 段宁远 闫祥宇 

机构地区：[1]中国科学院微电子研究所微电子器件与集成技术重点实验室,北京100029 [2]中国科学院大学,北京100049

出　　处：《微纳电子技术》2017年第4期229-234,共6页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(61306124)

摘　　要：通过化学气相沉积(CVD)工艺成功生长出少层MoS_2薄膜,用Raman光谱仪对材料进行表征,验证了三层MoS_2材料的存在。基于CVD生长出的三层MoS_2薄膜材料完成了背栅场效应晶体管(FET)的制作工艺研发。对MoS_2FET器件进行了电学特性表征,研制的MoS_2FET器件的开关比可达到1.45×10~6,器件的电子载流子场效应迁移率约为1 cm^2·V^(-1)·s^(-1)。对等离子增强化学气相沉积(PECVD)氮化硅(SiN_x)工艺掺杂MoS_2材料进行了研究,掺杂后器件的驱动电流提高了3倍多,验证了SiN_x掺杂MoS_2材料的有效性。通过控制PECVD SiN_x时间工艺参数对SiN_x薄膜厚度与掺杂浓度的关系进行了研究,随着SiN_x薄膜厚度增加器件的驱动电流逐渐增强,验证了SiN_x掺杂MoS_2材料的可控性。最后,对PECVD SiN_x工艺掺杂MoS_2材料的机理进行了讨论。Few layers molybdenum disulfide（MoS2）film was successfully synthesized by the chemical vapor deposition（CVD）process,and was characterized by the Raman spectrometer.The MoS2 film is 3 layers.Based on the 3-layer MoS2 film synthesized by the CVD,the fabrication process of the back-gate field effect transistor（FET）was successfully developed.The electrical properties of the MoS2 FET were characterized.The on/off ratio and electronic carrier field effect mobility of the obtained device can reach 1.45×106 and about 1 cm2·V-1·s-1,respectively.The MoS2 material doped by the plasma enhanced chemical vapor deposition（PECVD）silicon nitride（SiNx）process was researched.The driven current of the device after doping increases by more than 3 times,validating the effectiveness of the MoS2 material doped by SiNx.By controlling the time parameters of the PECVD SiNx process,the relation between the SiNx film thickness and doping concentration was studied.With the increase of the SiNxfilm thickness,the driven current of the device is enhanced gradually,validating the controllability of the MoS2 material doped by SiNx.Finally,the mechanism of the MoS2-doped material by PECVD SiNxprocess was discussed.

关 键 词：二硫化钼场效应晶体管(MoS2 FET) 掺杂 二维(2D)半导体材料 过渡金属硫化物(TMD) 等离子体增强化学气相沉积(PECVD) 

分 类 号：TN386[电子电信—物理电子学] TN305.3