准一维GaN纳米线中类氢杂质态光学特性  

Luminous properties of impurity state in quasi-1-dimensional wurtzite GaN nanowires

作　　者：张立[1] 

机构地区：[1]广州番禺职业技术学院电子与机械系,广东番禺511483

出　　处：《功能材料》2011年第S4期666-669,673,共5页Journal of Functional Materials

基　　金：国家自然科学基金青年科学基金资助项目(60906042);广州市属高校"羊城学者"科研资助项目(10B010D)

摘　　要：考虑量子结构的各向异性,基于双参数变分方法理论分析了准一维GaN-基纳米线结构的类氢杂质态光学特性。数值结果表明,GaN纳米线体系的杂质结合能达到190meV,是相同尺寸GaAs-基量子线中相应值的2.5倍。这一结果与最近GaN纳米线杂质态的实验测量相当符合。计算发现,采用双参数变分波函数描述准一维GaN纳米线体系各向异性是有必要的,尤其是当纳米线尺寸较小时。讨论了杂质的位置对结合能、杂质基态能量以及变分参数的影响,并对这些观察背后的深刻物理现象进行了分析。Taking the anisotropy of the quantum structure into account,the luminous properties of hydrogenic impurity state in a quasi-1-dimensional(Q1D) GaN-based nanowire are theoretically analyzed based on the two-parameters variational approach.The numerical results showed that the binding energy of impurity gound state reaches 190 meV,which is nearly the 2.5 times of that in GaAs-based quantum wires with the same size.This is quite consistent with the recent experimental measurement of impurity state in GaN nanowires.Furthermore,it is found that the trial wavefunction with two variational parameters for the description of impurity states in Q1D GaN nanowire is necessary,especially when the nanowire radius is small.At last,we also discuss the influencs of impurity position on the binding energy,the energy of ground state as well as the variational parameters.And the profound physical origin behind these observations is analyzed reasonablely.

关 键 词：GAN纳米线 结合能 变分方法 杂质态 

分 类 号：O472.3[理学—半导体物理]