SU-8胶制备三维微电极结构研究  

The study of fabrication of three-dimensional micro-electrode structure for MEMS supercapacitor by SU-8 photoresist

作　　者：文春明[1,2] 尤政[3] 温志渝[1,2] 王晓峰[3] 陈李[1,2] 

机构地区：[1]新型微纳器件与系统技术国家重点学科实验室,重庆400030 [2]重庆大学微系统中心,重庆400030 [3]清华大学精密仪器与机械学系,北京100084

出　　处：《功能材料》2011年第S4期681-684,共4页Journal of Functional Materials

基　　金：高等学校科技创新工程重大项目培育资金资助项目(708072)

摘　　要：为了增大MEMS超级电容器电极结构的表面积,提高MEMS超级电容器的电荷存储能力,研究了利用SU-8胶制备高深宽比三维电极微结构。经过基片清洗、涂胶、前烘、曝光、后烘、显影、坚膜等过程,制备了深宽比为6的微结构。分析讨论了微结构制备过程中基底洁净度和升降温速度及曝光、显影时间等因素对结构制备的影响。实验结果表明,用SU-8胶制备高深宽三维电极微结构,能在相同底面积的基础上有效增加电极结构的表面积,提高单位底面积的电容器储能密度。In order to increase the surface area of MEMS supercapacitor electrode structure,and improve MEMS supercapacitor charge storage capacity.In this paper,high aspect ratio three-dimension electrode microstructures prepared by SU-8 photoresist production has been researched.After substrate cleaning,spin coating,soft bake,exposure,and post exposure,development and solidify membrane process,a microstructure of an aspect ratio of 6 was fabricated.Affection factors of the microstructure production process of basal cleanliness,increasing and decreasing the temperature,exposure time,development time for structure fabrication were analyzed and discussed.Experimental results show that high aspect ratio three-dimension electrode microstructure prepared by SU-8 photoresist can effectively increase the surface area of electrode structure on the same base area and improve storage density of the capacitor in unit base area.

关 键 词：三维微结构 SU-8光刻胶 高深宽比 超级电容器 MEMS 

分 类 号：TM53[电气工程—电器]