VDMOS器件高温热载流子效应的研究  

The Study of Hot Carrier Effect in VDMOS in High Temperature Situation

作　　者：储晓磊 高珊[1] 李尚君[1] 

机构地区：[1]安徽大学电子信息工程学院,合肥230601

出　　处：《固体电子学研究与进展》2016年第1期39-44,共6页Research & Progress of SSE

基　　金：国家核高基重大专项资助项目(2010ZX0103 0-001-001-004)

摘　　要：用二维器件仿真软件Silvaco-Atlas模拟了VDMOS器件工作时产热分布,观察到高温区集中分布在沟道末端及积累层区域。仿真了自加热效应情形下的输出特性曲线,图像显示曲线在达到饱和点后随漏电压增大有下降趋势。结合理论揭示了自加热效应造成器件电学参数退化机理。通过建立衬底电流模型,分析了衬底电流受偏置电压和温度影响的变化过程。结果表明:在偏置电压固定时,衬底电流随温度升高呈先下降后升高的变化过程;在高温和高偏置电压下衬底电流有指数上升趋势,而且正比于阈值电压、饱和漏电流以及传输特性等电学特性的退化。In this paper,the heat generation of VDMOS was simulated by using simulator Silvaco-Atlas.It showed that the distribution of high temperature focused on area of the end of channel and accumulation layer.Simulating the output characteristic curve at the situation of selfheating effect,it came to downtrend after drain voltage reached the saturation point.With theory,it revealed the electrical parameters of device degeneration induced by the self-heating effect.Through establishing the substrate current model,the changing processes of substrate current with the bias voltage and temperature were analyzed.The results show that the substrate current drops at first and then rises at a certain bias voltage when temperature rises.There is a trend that the substrate current has index rising,and at the same time,it is proportional to the degeneration of threshold voltage,saturated leakage current and the characteristics of transmission.

关 键 词：垂直双扩散金属氧化物半导体 自加热效应 衬底电流 热载流子效应 

分 类 号：TN386[电子电信—物理电子学]