GaSb衬底上分子束外延生长的低温GaSb薄膜的低缺陷表面（英文）  

Low-defect surfaces of low-temperature GaSb thin films on GaSb substrates

作　　者：郝瑞亭[1] 任洋[1] 刘思佳[1] 郭杰[1] 王国伟[2,3] 徐应强[2,3] 牛智川[2,3] 

机构地区：[1]云南师范大学太阳能研究所可再生能源材料先进技术与制备教育部重点实验室云南省农村能源工程重点实验室,云南昆明650500 [2]中国科学院半导体研究所半导体超晶格国家重点实验室,北京100083 [3]中国科学技术大学量子信息与量子科技前沿协同创新中心,安徽合肥230026

出　　处：《红外与毫米波学报》2017年第2期135-138,共4页Journal of Infrared and Millimeter Waves

基　　金：Supported by National Natural Science Foundation of China(11474248,61176127,61006085,61274013,61306013);Key Program for International S&T cooperation Projects of China(2011DFA62380);Ph.D.Programs Foundation of Ministry of Education of China(20105303120002)

摘　　要：系统地研究了随着GaSb薄膜生长温度的降低,Sb/Ga(V/III)比的变化对薄膜低缺陷表面质量的影响.为了获得良好表面形貌的GaSb外延层,生长温度与V/III比均需要同时降低.当Sb源裂解温度为900℃时,生长得到低缺陷表面的低温GaS b薄膜的最佳生长条件是生长温度为在再构温度的基础上加60℃且V/III比为7.1.The influence on the low-defect surface of GaSb thin-film material by the ratio of Sb to Ga （V/III） a- long with the reducing of the growth temperature was investigated systematically. In order to obtain a good surface morphology of the GaSh epitaxial layer with low defect, both of the growth temperature and the V/III ratio should be reduced at the same time. The optimal growth conditions of Low-temperature GaSb thin films are that the growth temperature is Tc ＋60℃ and the V/III ratio is about 7.1 when Sh cracker temperature is 900℃.

关 键 词：低缺陷 锑化镓 原子力显微镜 V/III比 

分 类 号：TN21[电子电信—物理电子学]