一种具有浮空P型埋层的新型FS-IGBT  

A Novel FS-IGBT with a Floating P-type Layer

作　　者：陈旭东[1] 成建兵[1,2] 郭厚东 滕国兵 周骏[1] 袁晴雯 CHEN Xudong CHENG Jianbing GUO Houdong TENG Guobing ZHOU Jun YUAN Qingwen(College of Electronic Science and Engineering, Nanjing Univ. of Posts and Telecommun. , Nanjing 210003, P. R. China National Application-Specific Integr. Circ. （ASIC） Syst. Engineer. Research Center, Southeast Univ. , Nanjing 210096, P. R. China)

机构地区：[1]南京邮电大学电子科学与工程学院,南京210003 [2]东南大学国家专用集成电路系统工程技术研究中心,南京210096

出　　处：《微电子学》2017年第2期254-257,284,共5页Microelectronics

基　　金：国家自然科学基金资助项目(61274080);中国博士后科学基金资助项目(2013M541585)

摘　　要：提出了一种在阳极引入浮空P型埋层的新型场截止绝缘栅晶体管(FS-IGBT)。结合超结与阳极短路的思想,在相同仿真条件下,与传统FS-IGBT相比,新结构的击穿电压提高了13.9%。当通态电流密度为150A/cm^2时,新结构的优化压降增量小于9%,关断时间比传统结构降低了60%以上,并且工作时无负阻现象,实现了导通压降与关断功耗的良好折中。A novel FS-IGBT with a floating P-type layer （FPL） was introduced at the anode portion. It incorporated the super junction and the shorted anode theory. At the same simulation condition, the proposed FS- IGBT＇ s breakdown voltage was 13.9%0 higher than that of the conventional one. Its optimized forward drop increment was less than 9%, and the turn off time was decreased by more than 60% under a current density of 150 A/cm^2. Additionally, there was no snapback observed. As a result, the proposed FS-IGBT presented a better trade-off between the on-state voltage drop and the turnoff power loss.

关 键 词：场截止绝缘栅晶体管 击穿电压 负阻现象 折中关系 

分 类 号：TN321[电子电信—物理电子学]