C-V法测量GaN基蓝光LED的PN结特性  

Measuring characteristics of PN junction in GaN-based LED using C-V method

作　　者：符斯列[1] 王春安[2] 蒋联娇 秦盈星 吴先球[1] 

机构地区：[1]华南师范大学物理与电信工程学院广东省量子调控工程与材料重点实验室,广东广州510006 [2]广东技术师范学院电子与信息工程学院,广东广州510006

出　　处：《物理实验》2017年第5期1-6,共6页Physics Experimentation

基　　金：国家自然科学基金资助(No.10575039);广东省自然科学基金资助(No.S2013010012548)

摘　　要：应用C-V法研究了GaN基蓝光LED的PN结特性.通过变温的C-V曲线、相应的C-2-V曲线和C-3-V曲线判断GaN基PN结的结类型,计算杂质浓度分布和PN结接触电势差,并分析了温度变化对PN结特性的影响.该实验不仅能加深学生对二极管PN结及C-V法应用的认识和理解,还可以让学生了解GaN新型半导体材料的相关知识.Temperature-dependent C-V measurement was app GaN-based blue LED. The type of the PN junction was determined ied to study the PN junction in the impurity distribution and the contact potential difference were calculated, and temperature dependence of the characteristics of the PN junction was analyzed. The experiment could not only deepen students＇ understanding on PN junction and the application of the C-V method, but also help students understand the relevant knowledge of GaN semiconducting materials.

关 键 词：C-V法 GaN基蓝光二极管 PN结特性 杂质浓度分布 

分 类 号：O475[理学—半导体物理]