1064nm高反射膜的PECVD法制备及其抗激光损伤性能  

Preparation of Reflectance Coating with High Threshold at 1064nm by PECVD Technique and Its Anti-laser Damage Performance

作　　者：杨陈[1,2] 杭凌侠[1,2] 李林军[1,2] 郭峰[1,2] 

机构地区：[1]西安工业大学光电工程学院,陕西西安710021 [2]陕西省薄膜技术与光学检测重点实验室,陕西西安710021

出　　处：《应用激光》2017年第2期288-291,共4页Applied Laser

基　　金：陕西省教育厅重点实验室科研计划资助项目(项目编号:16JS037)

摘　　要：采用等离子体增强化学气相沉积(PECVD)方法制备氮化硅(SiNx)和含氟氧化硅(SiOxFy)薄膜,探讨了薄膜材料的最佳制备工艺参数,明确了薄膜光学特性与气体流量、射频功率、反应压强等制备工艺参数的关系;设计并制备了1 064nm高反射膜,并与PVD法制备的Ta_2O_5/SiO_2高反膜进行对比,结果表明,其反射率在99.0%左右时,PECVD法制备的高反膜具有较高的抗激光损伤阈值,约为PVD法的2倍。The silicon nitride （SiN~） and silicon oxide （SiO~ Fy ） films were prepared by plasma enhanced chemical vapor deposition （PECVD）. The optimum preparation parameters of the films were discussed. The relations of film optical properties with the gas flow rate, the RF power and the reaction pressure were confirmed. A high reflection film of 1 064 nm was designed and fabricated, and com- pared with the Ta2O5/SiO2 film prepared by PVD. The results show that when the reflectance is about 99.0%, the high reaction film prepared by PECVD has a high anti-laser damage threshold, which is about 2 times of that of PVD.

关 键 词：薄膜 PECVD 高反膜 损伤阈值 

分 类 号：O484[理学—固体物理]