深沟槽超级结器件的干刻工艺研究  

Dry Etching study in Deep Trench Super Junction Process

作　　者：吕亚冰 LV Yabing(HuaHong Grace Semiconductor Manufacturing Corporation, Shanghai 201206, China.)

机构地区：[1]上海华虹宏力半导体制造有限公司,上海201206

出　　处：《集成电路应用》2017年第6期52-56,共5页Application of IC

基　　金：上海市软件和集成电路产业发展专项基金(15RJ0223)

摘　　要：功率半导体器件以其优越的电特性在许多领域取代了传统的双极型晶体管。功率半导体器件导通电阻由于受击穿电压限制而存在一个极限即硅限而无法再降低。"超级结理论"的应用,使导通电阻相对于传统技术降低了80%~90%,打破了硅限,提高了开关速度。通过对腔体压力、温度、RF功率、气体流量、硅片图形密度和刻蚀面积等各种工艺参数的实验,研究其对深沟槽超级结(Deep Trench Super Junction)高压器件干法刻蚀工艺的影响与作用,实现单步干法刻蚀就在硅衬底上形成深沟槽。Power semiconductor devices have replaced conventional bipolar transistors in many fields with their superior electrical characteristics. Because of the limit of breakdown voltage, the conduction resistance of a power semiconductor device has a limit, that is the silicon limit can not be lowered. The application of super junction theory has made the on resistance lower by 80%-90% than the traditional technology, breaking the silicon limit and increasing the switching speed. This article through various process parameters experiment such as：the chamber pressure, temperature, RF power, gas flow rate and pattern density, etching area of wafer, research the influence and function of dry etching process in DT-SJ （ Deep Trench Super Junction ） integrated circuit fabrication and to achieve process target.

关 键 词：芯片制造工艺 干法刻蚀 深沟槽 超级结 

分 类 号：TN405[电子电信—微电子学与固体电子学]