基于CVD单层MoS_2 FET的光电探测器  

A Photodetector Based on CVD Monolayer MoS_2 FETs

作　　者：战俊[1,2] 粟雅娟[1] 贾昆鹏 罗军[1] 闫祥宇 

机构地区：[1]中国科学院微电子研究所集成电路先导工艺研发中心,北京100029 [2]中国科学院大学,北京100049

出　　处：《微纳电子技术》2017年第7期437-443,共7页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(61306124)

摘　　要：通过化学气相沉积(CVD)工艺在SiO_2/Si衬底生长出MoS_2材料,对材料进行喇曼光谱表征,验证了单层MoS_2的存在;基于CVD生长的单层MoS_2完成了晶圆级背栅场效应晶体管(FET)光电探测器的工艺研发;对MoS_2 FET器件进行了电学特性表征,开关比可达到105数量级,场效应迁移率约为1 cm2·V-1·s-1,栅极漏电流为10-10 A数量级;对MoS2FET器件的光电特性进行了表征,该光电探测器具有普通光电导探测器的基本光电特性,其光电流随光照强度的增强以及源漏电压的增加而增加,同时由于栅极的调制提高了光电探测器的灵活性。通过控制栅极电压能够控制MoS2FET光电探测器的暗电流大小,实现对探测器η参数的有效调制。最后通过器件能带图对MoS_2 FET光电探测器的光电特性进行了阐释,为其走向实际应用奠定了理论基础。The MoS2 material was successfully synthesized by the chemical vapor deposition（CVD）process on the SiO2/Si substrate.The existence of a monolayer MoS2 was validated by Raman spectrum characterization.Based on the CVD monolayer MoS2,the wafer scale fabrication process of a back-gate field effect transistor（FET）photodetector was successfully developed.The electrical properties of the MoS2 FET were characterized.The on/off ratio of the obtained device reaches the order of magnitude of 105,the field effect mobility is about 1cm2·V-1·s-1,and the gate leakage current is 10-10 A order of magnitude.The photoelectric properties of the MoS2 FET were also characterized.The photodetector has the basic photoelectric properties of a common photoconductive detector,its photocurrent increases with the increase of the illumination intensity and the voltage between the drain and source.In addition,the flexibility of the photodetector is enhanced as a result of the modulation of the gate electrode.The magnitude of the dark current of the MoS2 FET photodetector can be changed by controlling the gate voltage,then the parameterηcan be effectively modulated.Finally,the photoelectric properties of the MoS2 FET photodetector was illustrated by the device band diagram,providing a theoretical foundation for the practical applications.

关 键 词：二硫化钼(MoS2) 场效应晶体管(FET) 二维(2D)半导体材料 光电探测器 过渡金属硫属化合物(TMD) 

分 类 号：TN304.9[电子电信—物理电子学] TN364