电容式加速度传感器设计及工艺加工  

Design and Process of a Capacitive Accelerometer Sensor

作　　者：任建军[1,2] 石云波[1,2] 唐军[1,2] 冯恒振 杜文略 

机构地区：[1]中北大学仪器科学与动态测试教育部重点实验室,太原030051 [2]中北大学电子测试技术重点实验室,太原030051 [3]北京强度环境研究所,北京100076

出　　处：《微纳电子技术》2017年第7期472-478,共7页Micronanoelectronic Technology

基　　金：国家杰出青年科学基金资助项目(51225504)

摘　　要：针对精确制导的应用需求,设计了一种量程为100g"三明治"电容式加速度传感器,通过ANSYS仿真软件在100g及10 000g高过载条件下进行应力分析和模态分析,并通过Matlab分析、优化结构参数从而确定传感器敏感结构的具体尺寸。利用阻抗分析仪分析得到了传感器的静态电容为14.09 pF,结构输出灵敏度为0.281 8 pF/g,传感器的输出灵敏度为13.5μV/g。根据结构特性设计工艺流程并进行关键工艺加工:硅基质量块双面湿法腐蚀、ICP干法刻蚀及玻璃通孔电镀工艺。最终,通过实验验证电容式加速度传感器设计的可行性。According to the application requirements of precision guidance,a ＂sandwich＂ capacitive accelerometer sensor with the range of 100 g was designed.Using the ANSYS simulation software,the stress analysis and modal analysis were carried out under high overload conditions of 100gand10 000 g.The size of the sensitive structure of the accelerometer sensor was obtained by the MATLAB analysis and optimal structure parameters.The analysis results of the impedance analyzer show that the static capacitance of the sensor is 14.09 pF,the output sensitivity of the structure is 0.281 8 pF/g,the sensitivity of the sensor is 13.5μV/g.According to the structural characteristics of the accelerometer sensor,the process flow was designed and the key processes were carried out,including the double-sided wet etching based on silicon,ICP dry etching and glass through-hole electroplating.Finally,the design feasibility of the capacitive accelerometer sensor was verified by experiments.

关 键 词：电容式加速度传感器 高过载 湿法腐蚀 电镀工艺 灵敏度 

分 类 号：TH703[机械工程—仪器科学与技术] TP212[机械工程—精密仪器及机械]