功率VDMOS器件抗SEB/SEGR技术研究进展  

Progress of Radiation Hardened Technology of SEB and SEGR for Power VDMOS

作　　者：唐昭焕[1,2] 杨发顺[1] 马奎[1] 谭开洲[2] 傅兴华[1] 

机构地区：[1]贵州大学大数据与信息工程学院,贵阳550025 [2]模拟集成电路重点实验室,重庆400060

出　　处：《微电子学》2017年第3期401-405,共5页Microelectronics

基　　金：国家自然科学基金资助项目(61464002);贵州省重大科技专项资助项目(黔科合重大专项字[2015]6006)

摘　　要：针对功率VDMOS器件抗单粒子辐射加固技术在空间辐射环境下的要求,从重粒子对VDMOS器件的辐射机理及作用过程出发,归纳出功率VDMOS器件抗单粒子辐射加固的三类技术:屏蔽技术、复合技术和增强技术。综述了国内外功率VDMOS器件这三类抗单粒子辐射加固技术的研究进展,为半导体器件抗单粒子辐射加固技术研究提供了参考。The failure mechanism and action process of VDMOS radiated by heavy ions were analyzed for performing some hardened technologies on power VDMOS used in space environment. And three radiation hardened technologies, shielding technology, recombination technology and enhancement technology, for power VDMOS were concluded. The developments of single-event radiation hardened technologies for power VDMOS in domestic and international fields were summarized. It could provide reference for the researches about single-event radiation hardened technologies of semiconductor devices.

关 键 词：功率VDMOS 单粒子烧毁 单粒子栅穿 加固技术 

分 类 号：TN386[电子电信—物理电子学]