一种改进的AlGaN/GaN HEMT全局直流模型  

An Improved AlGaN/GaN HEMT Global Direct Current Model

作　　者：常永明[1] 毛维[1] 郝跃[1] 

机构地区：[1]西安电子科技大学微电子学院宽带隙半导体技术国家重点学科实验室,西安710071

出　　处：《微电子学》2017年第3期416-419,共4页Microelectronics

基　　金：国家自然科学基金资助项目(61574112)

摘　　要：对Angelov直流FET模型进行改进,并应用同一遗传算法对改进前后的模型进行全局直流模型参数提取,平均相对误差分别为4.58%和1.8%。将模型计算值与实验数据进行对比,结果表明,改进后的模型能更加准确地描述AlGaN/GaN HEMT源漏电流随栅、漏电压变化的全局直流输出特性,从而为AlGaN/GaN HEMT提供一种准确的全局直流模型和精确的参数提取方法。An improved Angelov dc FET model was presented. The improved model had described more accurately the global dc output characteristics of A1GaN/GaN HEMT＇s source-drain currents along with the changes of gate voltage and drain voltage. The same genetic algorithm was applied to extract the parameters of the original model and the improved model respectively. The average relative error was 4. 58% and 1.8% respectively. The calculated values of the original model and the improved model were compared with the experimental data. The results showed that the improved Angelov global model had more agreement with the measured data and had described the A1GaN/GaN HEMT global dc characteristics more accurately than the original model. Thus, an accurate global dc model and a precise parameter extraction method were provided for the AlGaN/GaN HEMT devices.

关 键 词：ALGAN/GAN HEMT 全局直流模型 遗传算法 

分 类 号：TN32[电子电信—物理电子学]