SBFL结构SiGe HBT器件的击穿特性研究  

Research on the Breakdown Characteristics of SiGe HBT with SBFL Structure

作　　者：陈繁[1,2] 马婷[3] 谭开洲[2] 王兰[1] 钟黎[1] 

机构地区：[1]重庆邮电大学光电工程学院,重庆400065 [2]模拟集成电路重点实验室,重庆400060 [3]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2017年第3期433-436,共4页Microelectronics

基　　金：模拟集成电路重点实验室基金资助项目(0C09YJTJ1501)

摘　　要：对高频SiGe HBT器件的击穿特性进行了研究。借助TCAD仿真工具,对超结结构引入器件集电区后的击穿特性进行了分析,提出了一种采用分裂浮空埋层结构(SBFL)的SiGe异质结器件。这种结构改善了器件的内部电场分布,电场分布由原来的单三角形分布变成双三角形分布。仿真结果表明,该器件结构的击穿电压由原有的3.6V提高到5.4V,提高了50%。The breakdown characteristics of high frequency SiGe HBT was studied. The super-junction used in the collector region for improving the break down characteristics was analyzed by TCAD simulation tools. A kind of SiGe HBT device with a new collector spilt buried floating layer（SBFL） was presented. The structure had improved the internal electric field distributions of this device, and the electric field distributions had changed from one triangle profile to double triangle profile. The simulation results showed that the breakdown voltage of the proposed structure was increased by 50% from 3.6 V to 5.4 V.

关 键 词：锗硅异质结器件 超结结构 分裂浮空埋层 击穿电压 掺杂分布 

分 类 号：TN322[电子电信—物理电子学]