InSb薄膜磁阻效应的厚度依赖性  

Thickness-dependent magnetoresistance effects in InSb films

作　　者：张豫徽[1,2] 宋志勇[2,3] 陈平平[2] 林铁[2] 田丰[1] 康亭亭[2] 

机构地区：[1]上海理工大学材料科学与工程学院,上海200093 [2]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083 [3]华东师范大学极化材料与器件教育部重点实验室,上海200062

出　　处：《红外与毫米波学报》2017年第3期311-315,共5页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(11204334;61475178)~~

摘　　要：在12~300K的温度范围内研究了InSb薄膜(利用MBE生长)的磁阻效应随厚度的变化关系.实验发现厚的InSb薄膜只能产生半经典(∝B2)磁阻效应.而减小薄膜厚度,在薄的InSb薄膜中会更容易出现弱反局域化效应,从而造成在低温下(<35K)出现了一个异常的随温度增加而迁移率降低的趋势.我们发现该弱反局域化效应可用HLN模型拟合,证明了它可能来源于二维(2-D)体系,比如InSb的界面态.We experimentally investigated the thickness-dependent magnetoresistance properties of InSb films in the temperature range of 12 x 300 K. The samples were grown on semi-insulating GaAs （100） substrates by molecular beam epitaxy （MBE）. It was observed that the thick InSb only can show the semi-classical B2 dependence magnetoresistance resulted from the Lorentz deflection of carriers. At the same time, we found that weak antilocalization （WAL） effect can be much enhanced by reducing the sample＇ s thickness （ with the thickness N 0.1 p,m）. The thin sample＇ s WAL magnetoresistance plot can be well fitted by Hikan-Larkin-Nagaoka （HLN） model, which demonstrates that the obseved WAL effect for thin InSb is with a 2-dimension character, which can be associated with the surface/interface states of InSb.

关 键 词：锑化铟 磁阻效应 弱反局域化效应 界面/表面态 

分 类 号：O472[理学—半导体物理]