10 Gbit/s InGaAs/InP雪崩光电二极管  

10 Gbit/s InGaAs/InP Avalanche Photodiode

作　　者：尹顺政[1] 郝文嘉[1] 张宇[1] 于浩[1] 李庆伟[1] 赵润[1] 车相辉[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2017年第7期516-520,共5页Semiconductor Technology

摘　　要：基于InGaAs/InP吸收区、渐变区、电荷区和倍增区分离雪崩光电二极管(SAGCM APD)器件结构,利用数值计算方法,模拟了各层参数对器件频率响应特性的影响。模拟结果表明,吸收层、倍增层厚度及电荷层面电荷密度可影响器件的-3dB带宽;随增益的增加,器件带宽会逐渐降低;电荷层面电荷密度对器件击穿电压有明显影响。结合此模拟结果,制作出了高速InGaAs/InP雪崩光电二极管,并对器件进行了封装测试。测试结果表明,该结果与模拟结果相吻合。器件击穿电压为30V;在倍增因子为1时,器件响应度大于0.8A/W;在倍增因子为9时,器件暗电流小于10nA,-3dB带宽大于10GHz,其性能满足10Gbit/s光纤通信应用要求。Based on the InGaAs/InP separate absorption,grading,charge and multiplication avalanche photodiode（ SAGCM APD） structure,the influences of the parameters of each layer on the frequency response characteristics of the device were simulated by the numerical computation method. The simulation results show that the thicknesses of the absorbing layer and multiplication layer and the surface charge density of the charge layer can affect the-3 dB bandwidth of the device. With the increase of the gain,the device bandwidth decreases. The surface charge density of the charge layer has a significant influence on the breakdown voltage of the device. Under the guidance of the simulation result,the highspeed InGaAs/InP avalanche photodiode was fabricated,and the device was packaged and tested. The test results show that the results are consistent with simulation results. The breakdown voltage of the device is 30 V. The responsibility of the device is greater than 0. 8 A/W when the multiplication factor is1. The dark current is less than 10 n A and the-3 dB bandwidth is greater than 10 GHz when the multiplication factor is 9. The performance of the device can meet the requirements of 10 Gbit/s fiber optic communication applications.

关 键 词：INGAAS/INP 吸收区、渐变区、电荷区和倍增区分离雪崩光电二极管(SAGCM APD) 雪崩 频率响应 光通信 

分 类 号：TN312.7[电子电信—物理电子学] TN364.2