石墨烯湿法转移过程工艺优化  

Optimization of the Wet Transfer Technique of Graphene

作　　者：吴玉玲[1] 毕瑞可 张杰[1] 吴长青[1] 张为中[2] 郭航[1] Wu Yuling Bi Ruike Zhang Jie Wu Changqing Zhang Weizhong Guo Hang(Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen 361005, China Xinjiang Branch, China Telecom Group Ltd. , Wulumuqi 830011, China)

机构地区：[1]厦门大学萨本栋微米纳米科学技术研究院,福建厦门361005 [2]中国电信公司新疆分公司,乌鲁木齐830011

出　　处：《微纳电子技术》2017年第8期565-569,579,共6页Micronanoelectronic Technology

基　　金：厦门市科技项目(3502Z20143003)

摘　　要：石墨烯的转移过程决定着石墨烯的品质,进而对石墨烯基器件的性能有重要的影响。针对化学气相沉积(CVD)法生长的石墨烯在湿法转移过程中存在的问题,在常规湿法转移的基础上进行了优化研究。实验结果表明:基体背面石墨烯的刻蚀工艺可以有效解决铜箔残留问题;采用二次涂胶工艺可以大幅降低石墨烯的裂痕破洞密度;超声波处理有效提升了石墨烯表面残胶的去除效率。优化后的转移工艺可以明显降低石墨烯产品中的杂质数量和缺陷密度,提升石墨烯的表面洁净度,显著地提高石墨烯质量。The transfer process of graphene plays an important role in determining the quality of graphene,which further exerts an important influence on the performances of graphene-based devices.For resolving the problem in the wet transfer process of graphene grown by the chemical vapor deposition（CVD）method,the optimized procedure was researched based on the conventional wet transfer of graphene.The experimental results show that the residue of copper is effectively eliminated by an extra etching of the graphene deposited on the back of copper.The densities of surface cracks and holes are largely reduced with the two-step coating process.The removal efficiency of the residual polymer on the surface of graphene is significantly enhanced by the ultrasonic treatment.The optimized transfer procedure can obviously reduce the amount of impurities and defect density of graphene and significantly improve the surface cleanliness and quality of graphene.

关 键 词：石墨烯 湿法转移 刻蚀 涂胶 超声处理 

分 类 号：TN305.7[电子电信—物理电子学]