梯度掺杂对SiCLTT短基区少子输运增强研究  

Minority Carrier Transport Enhancement in SiC LTT by Graded Doping Profile

作　　者：王曦[1] 蒲红斌[1] 刘青[1] 陈治明[1] 

机构地区：[1]西安理工大学,自动化与信息工程学院,陕西西安710048

出　　处：《电力电子技术》2017年第8期24-25,29,共3页Power Electronics

基　　金：国家自然科学基金(51677149)~~

摘　　要：通过理论分析与数值仿真的方法对具有梯度掺杂短基区的10kV 4H-SiC光触发晶闸管(LTT)进行了研究。短基区的施主杂质呈梯度分布,未耗尽时会在纵向产生感生电场,使短基区的少子输运从单一的扩散方式改善为扩散与漂移相结合的方式,促进短基区少子的纵向输运。仿真结果显示,梯度掺杂短基区具有更强的少子传输效率,相比于常规SiC LTT,具有梯度掺杂短基区的SiC LTT开通延迟时间缩短了36%。A 10 kV 4H-SiC light triggered thyristor（LYl＇） with graded thin n-base doping profile is proposed and studied by theoretical analysis and numerical simulation.With graded doping profile,there is an induced electric field in vertical direction to enhance minority carrier transport in thin n-base.As a result,the minority carrier transport in thin n-base is improved from diffusion mechanism to diffusion-drift mechanism.The simulations indicate that the grad- ually doped thin n-base obtain an enhancement in minority carrier transport, and the turn-on delay time of the pro- posed thyristor is reduced by 36%.

关 键 词：光触发晶闸管 碳化硅 梯度掺杂 

分 类 号：TN34[电子电信—物理电子学]