氮化镓体单晶生长的进展  

Progress in GaN Single Crystal Growth

作　　者：王建峰[1,2] 任国强[1,2] 徐科[1,2] 

机构地区：[1]中国科学院苏州纳米技术与纳米仿生研究所,江苏苏州215123 [2]苏州纳维科技有限公司,江苏苏州215123

出　　处：《电力电子技术》2017年第8期53-57,共5页Power Electronics

基　　金：国家自然科学基金(61325022;11435010)~~

摘　　要：主要讨论了3种氮化镓(GaN)体单晶生长技术,包括氢化物气相外延(HVPE)、助熔剂法、氨热方法。首先叙述了在HVPE法制备GaN体单晶方面的研究进展,包括位错的减少、应变的控制、衬底的分离和掺杂等。比较了3种方法的生长机制。其次,通过纳米压痕仪和高空间分辨表面光电压谱两种方法研究了体单晶中位错的力学行为。最后,介绍了GaN体单晶衬底在器件方面的应用。Three main technologies for gallium nitride（GaN） single crystal growth which are hydride vapor phase epitaxy （HVPE）,Na-flux method and ammonothermal method are discussed.The recent work in HVPE growth of GaN sub- strate is reported, in-cluding dislocation reduction, strain control, separation and doping of GaN substrate.The growth mechanisms of GaN by Na-flux and ammonothermal methods are compared with those of HVPE.The mechanical be- haviors of dislocation in GaN are investigated through nano-indentation and high-space resolution surface photo-voltage spec-troscopy.In the last part,the progress in growing some devices on GaN substrate by homo-epitaxy is introduced.

关 键 词：氮化镓 单晶 氢化物气相外延 

分 类 号：TN248.4[电子电信—物理电子学]