基于梳齿式电容加速度计的深硅刻蚀  

Deep Silicon Etching Based on Comb-Tooth Capacitance Accelerometer

作　　者：任子明[1,2] 白冰[1,2] 王任鑫[1,2] 张国军[1,2] Ren Ziminga b Bai Binga(a. Key Laboratory of Instrumentation Science ＆ Dynamic Measurement of Ministry of Educatio b. Science and Technology on Electronic Test and Measurement Laboratory, North University of China, Taiyuan 030051, Chin)

机构地区：[1]中北大学仪器科学与动态测试教育部重点实验室,太原030051 [2]中北大学电子测试技术重点实验室,太原030051

出　　处：《微纳电子技术》2017年第9期633-638,共6页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(61604134);山西省自然科学基金资助项目(2015021114)

摘　　要：梳齿式电容加速度计对梳齿的形貌有很高的要求,如需要梳齿侧壁具有良好的垂直度和粗糙度等。利用深硅刻蚀机对梳齿结构进行加工需要对刻蚀参数进行分析和调整。以SF_6和C_4F_8为刻蚀气体,设定深硅刻蚀中极板功率、腔室压力、刻蚀/钝化周期、气体流量等工艺参数,着重研究了刻蚀速率、垂直度、粗糙度、光刻胶选择比、均匀性等直接影响刻蚀形貌的几项因素,得到了宽5.3μm、深50μm的沟槽结构,且垂直度为89.5°,侧壁凸起高度为83.69 nm,而预期目标为垂直度90°±2°,侧壁凸起高度小于120 nm,故结果符合要求。最终将调整好的工艺用于刻蚀SOI片上的梳齿结构,得到了良好的形貌。The comb capacitive accelerometer has high requirements for morphology of the combs, such as good verticality and roughness of side walls. The etching parameters should be analyzed and adjusted for the fabrication of the comb structure using the deep silicon etching machine. Using SF6 and C4F8 as etching gas, setting the process parameters of the deep silicon etching such as the plate power, chamber pressure, etching/passivation cycle and gas flow, the several factors of the etching rate, verticality, roughness, selection ratio of photoresist and uniformity affecting the etching morphology directly were emphatically studied. The groove structure with 5.3μ m wide and 50 μm deep was obtained, the verticality was 89. 5°, the sidewall bump height was 83.69 nm, and the expected goals for the verticality and sidewall bump height were 90°±2°and less than 120 nm, respectively, so the results meet the requirements. Finally, the adjusted process was applied to etch the comb structure on SOI wafers and a good morphologywas also obtained.

关 键 词：深硅刻蚀 梳齿结构 刻蚀速率 垂直度 选择比 均匀性 

分 类 号：TN305.7[电子电信—物理电子学]