高深宽比石英结构的NLD刻蚀  

NLD Etching of a High Aspect Ratio Quartz Structure

作　　者：吴亚宁[1] 张伟[2] 王逸群[2] 黄健[1] 缪小虎 王进[2] 金晓盛[2] Wu Yaning Zhang Wei Wang Yiqun Huang Jian Miao Xiaohu Wang Jin Jin Xiaosheng(School of Materials Science and Engineering, Shanghai University, Shanghai 200436, China Nano Fabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics （ SINANO） , Chinese Academy of Sciences, Suzhou 215123, China)

机构地区：[1]上海大学材料科学与工程学院,上海200436 [2]中国科学院苏州纳米技术与纳米仿生研究所纳米加工平台,江苏苏州215123

出　　处：《微纳电子技术》2017年第9期645-649,共5页Micronanoelectronic Technology

基　　金：国家自然科学基金青年科学基金资助项目(11304356)

摘　　要：基于磁中性环路放电(NLD)等离子体刻蚀机的原理,研究了Ar和C_4F_8混合气体氛围下,射频(RF)天线功率、偏置电源功率、气压和C4F8体积流量等工艺参数对NLD刻蚀石英的影响,最终获取优化的工艺参数,用于高深宽比石英结构的制备。结果表明,随着RF天线功率的增加,石英刻蚀速率逐渐降低,偏压不断减小;增加偏置电源功率,刻蚀速率及偏压持续增大,刻蚀比不断增大;随着反应压强的增加,偏压变大,而刻蚀速率一直降低;C_4F_8体积流量增加,偏压一直增大,石英刻蚀速率先是快速上升而后逐渐变小。在优化的工艺参数下,刻蚀速率为439 nm/min,深宽比可以达到10∶1。Based on the principle of the magnetic neutral loop discharge （NLD） plasma etcher, the effects of the process parameters on the NLD etching of quartz were studied in the mixed gas ambience of Ar and C4F8, such as the radio frequency （RF） antenna power, bias supply power, pressure and volume flow rate of C4F8. Finally, the optimized parameters for the preparation of the high aspect ratio quartz structure were obtained. The results show that with the increase of the RF antenna power, the etching rate of the quartz and the bias voltage gradually decrease. With the increase of the bias power, the bias voltage and etching rate of the quartz continue to increase, and the selectivity increases. With the increase of the pressure, the bias voltage increases, and the etching rate of the quartz decreases. With the increase of the volume flow rate of C4F8, the bias voltage increases, the etching rate of the quartz quickly increases firstly and then gradually decreases. Under the optimized process parameters, the etching rate is 439 nm/min, and the aspect ratio reaches 10 ： 1.

关 键 词：磁中性环路放电(NLD)等离子体 Ar+C4F8 石英 高深宽比 刻蚀 

分 类 号：TN305.7[电子电信—物理电子学]