铜CMP碱性抛光液中氧化剂的电化学行为研究  

Study on the Electrochemical Behavior of Oxidant in Copper Chemical Mechanical Polishing Alkaline Slurry

作　　者：贾英茜[1] 牛新环[2,3] 腰彩红 

机构地区：[1]石家庄学院,石家庄050000 [2]河北工业大学电子信息工程学院,天津300130 [3]天津市电子材料与器件重点实验室,天津300130

出　　处：《微电子学》2017年第4期586-589,592,共5页Microelectronics

基　　金：国家02重大专项资助项目(2016ZX02301003-004-007);河北省自然科学基金资助项目(E2013202247;F2015202267);天津市自然科学基金资助项目(16JCYBJC16100)

摘　　要：化学机械抛光(CMP)工艺是IC工艺中大马士革工序的关键步骤。抛光液的电化学行为研究对抛光质量的控制具有重要意义。采用电化学测试手段,研究碱性抛光液中氧化剂(H_2O_2)对铜表面钝化膜的成膜影响,分析H_2O_2对抛光速率、表面粗糙度的影响机理。通过实验确定,在0.5%SiO_2磨料和3%表面活性剂的碱性抛光液中,添加0.5%的H_2O_2和3%的FA/OⅡ型螯合剂可获得大于800 nm/min的高抛光速率和表面粗糙度为22.2 nm的较佳平坦效果。Chemical mechanical polishing（ CMP） is the key step in the Damascene process of IC manufacture. The research of slurry electrochemical behavior is very important for the control of polishing quality. The influence of H_2O_2 in the alkaline slurry on the forming of passivation film on copper surface was studied by using electrochemical measurement technology. The influence mechanism of H_2O_2 on the polishing rate and surface roughness was analyzed. It was indicated from the experiment results that adding 0. 5% H_2O_2 and 3% FA/O Ⅱ complexing agent in the alkaline slurry containing0. 5% SiO_2 and 3% FA/O surfactant could achieve a high polishing rate（ 800 nm/min） and an optimal planarization effect（ surface roughness was 22. 2 nm）.

关 键 词：化学机械抛光 电化学 铜 抛光速率 表面粗糙度 

分 类 号：TN301.2[电子电信—物理电子学]