一步掩膜法制备ZnO纳米线忆阻器  

ZnO Nanowire Memristors Fabricated by One Step Shadow Mask Technique

作　　者：李久朋 马德伟[1] 曹鸿涛[2] 竺立强[2] 李俊[2] 李康[2] 梁凌燕[2] 张洪亮[2] 高俊华[2] 诸葛飞[2] 

机构地区：[1]浙江工业大学理学院,浙江杭州310023 [2]中国科学院宁波材料技术与工程研究所,浙江宁波315201

出　　处：《材料科学与工程学报》2017年第4期592-595,共4页Journal of Materials Science and Engineering

基　　金：国家自然科学基金资助项目(51272261,61474127)

摘　　要：本文基于单根ZnO纳米线(NW),采用一步掩膜的方法制备了Au/ZnO NW/Au忆阻器。器件表现出无极性忆阻行为,开关比可达10~5以上。低阻态具有半导体导电特性,推测忆阻行为可能来源于ZnO NW表面氧空位形成的不连续导电丝的通断。一步掩膜法工艺简单,制备过程对器件污染少,因此是制备纳米线器件的有效方法。Single ZnO nanowire （NW）-based Au/ZnO NW/Au memristors were fabricated by a one step shadow mask technique. The devices show nonpolar memristive switching behavior with an on/off ratio 〉10^5. The low resistance state of the materials exhibits semiconducting behavior. It is inferred that the memristive switching may be attributed to the formation/rupture of discontinuous oxygen vacancy filaments at the surfaces of ZnO NWs. The one step shadow mask technique is an effective method for the fabrication of NW devices due to the facile process and less contaminants introduced into devices compared to lithography techniques.

关 键 词：忆阻器 ZNO纳米线 一步掩膜法 电致阻变 

分 类 号：TB43[一般工业技术]