半绝缘GaAs的欧姆接触电极材料Ag/Co掺杂的非晶碳膜制备与检测  

Preparation and detection of an ohmic contact electrode material Ag/Co doped amorphous carbon film for semi-insulated GaAs

作　　者：杜维嘉 翟章印[1] 吉帅[1] 藏婷玉 

机构地区：[1]淮阴师范学院物理系,江苏淮安223300

出　　处：《大学物理》2017年第6期78-81,共4页College Physics

基　　金：江苏省自然科学基金(BK20140450);江苏省高等学校大学生创新创业训练计划项目(201510323016z)资助

摘　　要：稳定的欧姆接触对半导体器件的正常工作起到至关重要的作用.目前市场上主要采用金/金锗镍合金作为n型GaAs的电极材料,工艺复杂,成本高昂.本文研究了一种新型的、廉价的适用于半绝缘GaAs的欧姆接触电极材料Ag/Co掺杂的非晶碳膜及其制备过程,以便于读者对半导体器件的制备工艺和流程有所了解.Stable ohmic contacts play the important role in the normal operation of semiconductor devices. At present,Au/Au Ge Ni alloy is used as the electrode material of n type Ga As. The process is complex and the cost is high. In this paper,a new type of ohmic contact electrode material Ag/Co doped amorphous carbon film for semi-insulated Ga As and its preparation process are introduced to make it easy for readers to understand the process and technology of semiconductor devices.

关 键 词：半绝缘砷化镓 欧姆接触 光电导 

分 类 号：O484.4[理学—固体物理]