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作 者:邓小川[1] 谭犇 万殊燕 吴昊 杨霏 张波[1] DENG Xiaochuan TAN Ben WAN Shuyan WU Hao YANG Fei ZHANG Bo(School of Microelectronics and Solid Electronics, University of Electronic Science and Technology of China, Chengdu 610054, Sichuan Province, China Global Energy Interconnection Research Institute, Changping District, Beijing 102209, China)
机构地区:[1]电子科技大学微电子与固体电子学院,四川省成都市610054 [2]全球能源互联网研究院,北京市昌平区102209
出 处:《智能电网》2017年第8期733-741,共9页Smart Grid
基 金:国家重点研发计划(2016YFB0400500)~~
摘 要:碳化硅(SiC)作为近年来备受关注的一种宽禁带半导体材料,具有宽禁带、高临界击穿电场、高热导率以及高电子饱和漂移速度等良好的物理和电学特性。宽禁带半导体SiC电力电子器件,突破了传统硅基器件在耐压、工作频率以及转换效率等方面的性能极限,从而使电力系统功耗降低30%以上,在"大容量柔性直流输电"、"高效高体积功率密度电力电子变压器"等未来新一代智能电网领域具有非常广泛的应用前景。首先介绍超高压碳化硅电力电子器件在智能电网中应用的重要性,对近年来国内外超高压碳化硅电力电子器件(>10 kV)的结构设计、研制水平、最新进展以及其面临的挑战进行分析总结,并对超高压碳化硅电力电子器件在智能电网中的应用及未来的发展前景做出概述与展望。Silicon carbide(SiC) is an attractive material for wide band gap semiconductors because of its superior physical and electrical properties,such as wide band gap,high critical electric field,high thermal conductivity and high saturation electron drift velocity,etc.Breaking the performance limits of breakdown voltage,operating frequency and conversion efficiency created by traditional Si device,SiC power electronic device can reduce the system consumption by more than 30%.Moreover,ultrahigh-voltage SiC power electronic device will absolutely get a further development in new generation smart grid,such as large capacity VSC-HVDC and high-efficient and high volume power density power electronic transformer.The importance of the application of ultrahigh-voltage SiC power electronic device in smart grid is introduced.Then the structural design,development level,latest developments and challenges for the ultrahigh-voltage(higher than 10 kV) SiC power electronic devices at home and abroad are analyzed and summarized.Finally,applications of ultra high voltage SiC power electronic devices in smart grid and the future development prospects are also discussed.
分 类 号:TM76[电气工程—电力系统及自动化] TN303[电子电信—物理电子学]
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