P-Well BiCMOS[B]芯片与制程剖面结构  

Structure of P-Well BiCMOS[B] Chip and Process

作　　者：潘桂忠 PAN Guizhong(Shanghai Belling Co., Ltd, Shanghai 200233, China The 771 electronics technique institute of China Aerospace Science and Technology Research Academy, Shaanxi 710600, China.)

机构地区：[1]上海贝岭股份有限公司,上海200233 [2]中国航天电子技术研究院第七七一研究所,陕西710600

出　　处：《集成电路应用》2017年第10期48-52,共5页Application of IC

基　　金：上海市软件和集成电路产业发展专项基金(2009.090027)

摘　　要：P-Well BiCMOS[B]技术能够实现双极型与CMOS元器件兼容的工艺。为了便于集成,采用双极型制程为基础,引入CMOS元器件工艺,在同一硅衬底上实现兼容的BiCMOS[B]工艺。描述BiCMOS[B]集成电路芯片结构设计,工艺与制造技术,采用该技术得到了芯片制程结构。P-Well BiCMOS[B] technology can realize bipolar and CMOS components compatible process. In order to facilitate integration, a CMOS process based on bipolar process is introduced, and a compatible BiCMOS[B] process is implemented on the same silicon substrate. This paper describes the chip structure design, process and manufacturing technology of BiCMOS[B] integrated circuit. The chip fabrication process is obtained by using this technology.

关 键 词：集成电路制造工艺 P-WELL BiCMOS[B]器件剖面结构 芯片剖面结构 制程剖面结构 

分 类 号：TN405[电子电信—微电子学与固体电子学]