GaN衬底的腐蚀程度对ZnO纳米棒阵列光学性能的调控  

Regulation of Optical Properties of Zn O Nanorods Arrays by The Crossion of Ga N Substrate

作　　者：庞泽鹏 梅伏洪[1,2] 乔建东 尚林 余春燕[1,2] 许并社 

机构地区：[1]太原理工大学新材料界面科学与工程教育部重点实验室,山西太原030024 [2]太原理工大学新材料工程技术研究中心,山西太原030024

出　　处：《发光学报》2017年第10期1307-1313,共7页Chinese Journal of Luminescence

基　　金：国家自然科学基金(21471111;61475110;61404089;61504090;61604104);国家重点研发计划(2016YFB0401803);山西省基础研究项目(2015021103;201601D202029);山西省科技创新重点团队(201605D131045-10)资助项目~~

摘　　要：研究了在湿法腐蚀Ga N衬底上生长的Zn O纳米棒阵列的微结构和光学性能。相比于未经腐蚀及腐蚀5 min、10 min的Ga N上生长的Zn O纳米棒阵列,在腐蚀8 min的Ga N上生长的Zn O纳米棒阵列最细密,光学性能最好,其相应PL光谱峰强积分比IUV/Ivis最大(70.92)。因为此时Ga N衬底中的位错基本全部在表面露头,Zn O容易附着而形成更多的形核种子,并且衬底的位错在表面的边缘有助于诱导Zn O晶体的外延生长,所以Zn O棒更加细密,晶体质量更高,从而光学性能更好。1-D Zn O nanorods arrays were fabricated on the wet etched Ga N substrates and the microstructure and optical properties were studied. Compared with Zn O nanorods grown on Ga N with no corrosion and corrosion for 5 min and 10 min,the nanorod arrays with the etching time of 8 min are the finest and have the best optical properties,besides its corresponding PL spectral peak integral ratio IUV/Ivisis the largest. Because the dislocations in the Ga N substrate with the etching time of 8min are almost entirely in the surface outcrops,and the Zn O nanorods grown on it are easy to attach to form more nucleated seeds,furthermore it is helpful to induce the helical growth of Zn O crystals when the dislocations of the substrate are at the edge of the surface. Therefore,the Zn O nanorods are more compact and uniform,and the crystal quality and optical properties are more ideal.

关 键 词：ZN O纳米棒 水热法 Ga N衬底 湿法腐蚀 光学性能 

分 类 号：O472.1[理学—半导体物理] TN364[理学—物理]