X波段氮化镓小型化T/R组件的设计与实现  

Design and Implementation of Miniaturized X-band GaN T/R Module

作　　者：肖宁 秦立峰[1] 张选 程显平 

机构地区：[1]中国电子科技集团公司第十三研究所,河北石家庄050051

出　　处：《无线电工程》2017年第11期63-66,共4页Radio Engineering

基　　金：国家部委基金资助项目

摘　　要：针对高功率T/R组件的小型化问题,提出了一种X波段氮化镓(Ga N)小型化T/R组件的设计与实现方法。在小型化尺寸内实现了4个收发通道,内部包含了318个元器件。对组件复杂功能及由此带来的工艺装配问题和热问题进行了阐述与分析。研制出了采用多功能芯片技术、多层复合基板技术和多芯片组装(MCM)技术的组件,内部高度集成,实现了小型化。测试结果表明,组件尺寸为65 mm×60 mm×8.5 mm,发射输出功率≥30 W,实现了小型化和良好的电气性能。Aiming at the problems on miniaturization of high-power T /R module, design and implementation methods of miniaturized X-band GaN T/R module are presented.The T/R module contains 4 transmitting and receiving channels in a miniaturized dimension, which is built up by 318 devices. Assembly process and thermal problems are analyzed, which are brought by complicated function.Multifunctional transmit/receive chip, microwave composite substrate and MCM technologies are used to make the T/R module integrated and miniaturized.Tests show that the dimension of the T/R module is 65 mmx60 mmX 8.5 mm, the output power of the transmitting channel can reach at least 30 W.The electrical and structural properties are technically satisfied.

关 键 词：T/R组件 X波段 多功能芯片 多层复合基板 多芯片组装 氮化镓 小型化 

分 类 号：TN958.92[电子电信—信号与信息处理]