极端低温下SiGe HBT器件研究进展  

Research Progress of SiGe HBTs Under Extremely Low Temperature

作　　者：黄云波 李博[1,2] 杨玲[1,2] 韩郑生 罗家俊[1,2] HUANG Yunbo LI Bo YANG Ling HAN Zhengsheng LUO Jiajun(Institute of Microelectronics, Chinese Academy of Sciences, Beijing 1000Z9, P. R. China Key Laboratory of Silicon Device Technology, Chinese Academy of Science, Beijing 100029, P. R. China School of Microelectronics ,Universlty of Chinese Academy of Sciences, Beijing 100049, P. R. China)

机构地区：[1]中国科学院微电子研究所,北京100029 [2]中国科学院硅器件与技术重点实验室,北京100029 [3]中国科学院大学微电子学院,北京100049

出　　处：《微电子学》2017年第5期695-700,共6页Microelectronics

基　　金：国家自然科学基金资助项目(61404161)

摘　　要：系统地介绍了极端低温下SiGe HBT器件的研究进展。在器件级,分析了能带工程对SiGe HBT器件特性的影响,分析了极端低温下器件的直流、交流、噪声特性的变化,以及器件的特殊现象。在电路级,分析了基于SiGe HBT的运算放大器、低噪声放大器和电压基准源电路的低温工作特性。研究结果表明,SiGe HBT器件在低温微电子应用中具有巨大潜力。A comprehensive investigation on the research progress of the cryogenic performance of silicongermanium（SiGe）heterojunction bipolar transistor（HBT）technology was presented.At device level,the positive influence of bandgap engineering on the characteristics of SiGe HBTs was analyzed in detail.The DC,AC and noise characteristics of the device at cryogenic temperature were discussed respectively.Some unique cryogenic phenomena were presented and interpreted.At circuit level,the cryogenic performance and reliability of operational amplifiers,low noise amplifiers and voltage reference sources using SiGe HBT were discussed.Research results demonstrated that SiGe HBTs had enormous potential for future cryogenic microelectronics applications.

关 键 词：极端低温 锗硅 异质结晶体管 能带工程 

分 类 号：TN431[电子电信—微电子学与固体电子学]