GaSb单晶片CMP工艺的研究  

Research on the CMP Process of the GaSb Single Crystal Wafer

作　　者：边子夫 李晖[1] 徐世海[1] 刘卫丹 陈阳 高飞[1] 朱磊 Bian Zifu Li Hui Xu Shihai Liu Weidan Chen Yang Gao Fei Zhu Lei(The 46^th Research Institute, CETC, Tianjin 300220, Chin)

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《微纳电子技术》2017年第11期797-800,共4页Micronanoelectronic Technology

摘　　要：主要研究了GaSb单晶片的化学机械抛光(CMP)。使用硅溶胶作为抛光液对切割、机械抛光后的GaSb单晶片进行了CMP实验。在实验中,通过调节抛光液配比、pH值等工艺参数,研究不同氧化剂的掺入以及抛光液不同pH值对GaSb单晶片表面的影响。通过实验得出,最终在pH值为8且使用NaClO作为氧化剂的条件下,得到平整度较好、表面缺陷少、表面粗糙度低的高质量抛光表面的GaSb单晶片。通过微分干涉显微镜观察抛光后的单晶片表面无明显缺陷。经原子力显微镜(AFM)测试,单晶片的表面粗糙度达到了0.257 nm。The chemical mechanical polishing （CMP） of the GaSb single crystal wafer was mainly studied. Using the silica sol as polishing solution, the CMP experiment of the GaSb single crystal wafer after cutting and mechanical polishing was carried out. In the experiment, the influences of different oxidizing agent incorporation and different pH values of the polishing solution on the GaSb single crystal wafer surface were studied by adjusting the polishing solution proportion, pH value and other process parameters. The experimental results show that when the pH value is 8 and NaC10 is used as oxidizing agent, the GaSb single crystal wafers with high quality polishing surface, such as good flatness, less surface defects and low surface roughness, are finally ob- tained. By the differential interference microscope, it is observed that the surface of the polished single crystal wafer has no obvious defect. The atomic force microscope （AFM） test result shows that the surface roughness of the single crystal wafer reaches O. 257 nm.

关 键 词：GASB 化学机械抛光(CMP) 表面粗糙度 PH值 氧化剂 

分 类 号：TN305.2[电子电信—物理电子学]