活性焊料Sn3.5Ag4Ti(Ce,Ga)与GaAs基板的低温焊接  

Soldering between active solder Sn3.5Ag4Ti(Ce,Ga) and GaAs substrate at low temperature

作　　者：吴志中[1] 李国元[1] 成兰仙[1] 王小强[2] 

机构地区：[1]华南理工大学电子与信息学院,广州510641 [2]工业和信息化部电子第五研究所,广州510610

出　　处：《焊接学报》2017年第10期98-102,共5页Transactions of The China Welding Institution

基　　金：广东省科技计划资助项目(2013B010403003)

摘　　要：采用扫描电镜(SEM)、透射电镜(TEM)、能谱仪(EDS)研究了GaAs/Sn3.5Ag4Ti(Ce,Ga)/GaAs焊接界面的微观结构及焊接机理.通过剪切试验测试了低温活性焊接的力学性能.结果表明,Sn3.5Ag4Ti(Ce,Ga)低温活性焊料能够在250℃的空气环境中润湿GaAs基板;接头界面处有化合物Ga4Ti5生成.采用吸附理论和反应热力学方法分析了低温活性焊接机理.结果表明,GaAs基板与Ti原子之间存在较大的化学吸附能,可能是实现润湿的重要原因;GaAs与Ti原子发生界面反应并形成界面化合物是实现焊接的主要机理.保温时间1,30和60 min的焊接样品的抗剪强度分别是15.25,17.43和23.32 MPa,满足MIL-STD-883G-2006对芯片粘贴抗剪强度的要求.The microstructure and the soldering mechanism of GaAs/Sn3.5Ag4Ti( Ce,Ga)/GaAs have been investigated by using scanning electron microscopy( SEM),transmission electron microscope( TEM) and energy-dispersive spectroscopy( EDS). The mechanical properties of joints have been evaluated through the shear testing. The experiment results show that active solder Sn3.5Ag4Ti( Ce,Ga) can wet the GaAs substrate well at250 ℃ in air,and Ga4Ti5 phase is formed at the interface. The mechanism of active soldering has been analyzed based on the active adsorption and reaction thermodynamics theories. Results indicate that there is a larger chemical adsorption between GaAs substrate and Ti atoms which may be the main reason for wetting.The interfacial reaction between Ti and GaAs to generate reactants is the main soldering mechanism. The shear strength of the joints is measured to be 15. 25MPa,17.43 MPa,23. 32 MPa with soldering time of 1 min,30 min,60 min respectively,which meet the requirements of the MIL-883 G-2006 standard for the shear strength of die attachment well.

关 键 词：低温 活性焊接 界面反应 抗剪强度 

分 类 号：TG425[金属学及工艺—焊接]