有机场效应晶体管的非线性注入模型  

Nonlinear Injection Model of Organic Field Effect Transistors

作　　者：何兰 范国莹[1] 李尧[1] 吕文理 韦一 彭应全[1,2] 

机构地区：[1]兰州大学物理科学与技术学院微电子研究所,甘肃兰州730000 [2]中国计量大学光学与电子科技学院,浙江杭州310018

出　　处：《发光学报》2017年第11期1523-1531,共9页Chinese Journal of Luminescence

基　　金：国家自然科学基金(10974074)资助项目~~

摘　　要：有机场效应晶体管(Organic field effect transistor,OFET)的非线性特性是指其输出特性曲线在较低的漏极电压下出现类似于二极管的电压电流特性曲线,这种现象在有机场效应晶体管的实验研究中极为常见。Simonetti等通过引入随栅极电压变化的迁移率提出了模型并成功解释了这一现象,但实验中从器件转移特性得出的迁移率通常与栅极电压无关。本文通过引入常数迁移率对该模型进行改进,运用改进的模型研究了影响OFET非线性特性的主要因素,并对如何更加准确地获得器件参数进行了探究。The nonlinear characteristic of organic field-effect transistors（ OFETs） is that the output characteristic curve of an OFET at low drain voltages is similar to the current-voltage characteristic curve of a diode. And this phenomenon is very common in OFETs＇ studies. Simonetti et al. proposed a model and successfully simulated this nonlinear behavior. However,the mobility value of OFETs extracted from transfer characteristics is generally gate voltage independent. In addition,the introduction of gate voltage dependent mobility makes the model inconvenient for practical use. In this paper,we improved that model by introduction of constant mobility,that is,gate voltage independent mobility. The improved model is not only convenient for use,but also reduces the number of required input parameters for calculation. With the improved model,the output characteristic curve of the bottom contact OFETs was successfully simulated,and the main factors that influence the nonlinear characteristic of OFETs were analyzed.

关 键 词：有机场效应晶体管 非线性输出特性 阈值电压 场效应迁移率 

分 类 号：O472.4[理学—半导体物理]