六方氮化硼成核层减小MOCVD外延生长氮化铝薄膜的应力及裂纹(英文)  

Suppression of Stress and Cracks in the Epitaxy of AlN by MOCVD Through a Hexagonal BN Nucleation Layer

作　　者：吴清清 闫建昌[1,2,3] 张亮 陈翔 魏同波[1,2,3] 李杨 刘志强[1,2,3] 魏学成 王军喜 李晋闽[1,2,3] 

机构地区：[1]中国科学院半导体研究所照明研发中心,北京100083 [2]中国科学院大学,北京100049 [3]北京第三代半导体材料与应用工程技术研究中心,北京100083

出　　处：《光子学报》2017年第11期56-61,共6页Acta Photonica Sinica

基　　金：The National Key Research and Development Program(Nos.2016YFB04000803,2016YFB04000802);the National Natural Sciences Foundation of China(Nos.61376047,61527814,61674147,61376090,61204053);Beijing Municipal Science and Technology Project(No.D161100002516002);the National High Technology Program of China(Nos.2014AA032608,2011AA03A111);the National 1000Young Talents Program,and Youth Innovation Promotion Association CAS

摘　　要：利用单层六方BN材料(hexagonal BN:hBN)作为成核层,用金属有机物化学气相沉积法生长AlN薄膜,得到应力小裂纹少的外延材料。实验中,对hBN材料进行人为表面化学修饰,以增加hBN的缺陷和后续AlN生长的成核中心。对比分析了有无hBN成核层时生长的AlN薄膜质量,证实了hBN有助于减少AlN外延层中的裂纹,空气孔隙及应力。研究了V/III生长参数对AlN薄膜表面形貌、晶体质量和应力的影响,得到合适的生长窗口,获得完全无应力的氮化铝外延层,且其位错密度与蓝宝石上生长的氮化铝相当.Monolayer hexagonal BN （hBN） material served as the nucleation layer in A1N epilayer by metal-organic chemical vapor deposition. Through this method both the stress and the cracks in A1N films were greatly suppressed. The monolayer hBN material was treated with artificial surface chemical modification to increase the defects in hBN and the nucleation sites for the subsequent A1N growth. We analyzed the quality of AIN materials with/without the hBN nucleation layer. The results show the hBN layer can help decrease the cracks, air voids and stress in A1N films. Meanwhile, the impacts of different V/III ratios on the surface morphology, the crystal quality and the stress in A1N films were studied. An optimized V/III-ratio range was obtained. Under the optimized growth condition, the stress in the A1N layer with the hBN nucleation layer can be eliminated completely, and the crystal quality of the A1N films with a hBN nucleation layer was comparable with that of A1N directly grown on sapphire.

关 键 词：ALN薄膜 六方氮化硼 MOCVD 缺陷 应力 

分 类 号：TN304.2[电子电信—物理电子学]