不同沉积温度下AZO透明导电薄膜的性能研究  

Study on Properties of AZO Transparent Conductive Film Under Different Deposition Temperatures

作　　者：张程[1] 代明江 石倩 代建清[1] 侯惠君 林松盛 

机构地区：[1]昆明理工大学材料科学与工程学院,云南昆明650000 [2]广东新材料研究所现代材料表面工程技术国家工程实验室广东现代表面工程技术重点实验室,广东广州510651

出　　处：《热加工工艺》2017年第22期155-157,161,共4页Hot Working Technology

基　　金：国家自然科学基金(NCFC51302044);广东省金属平台创新建设(2013B091602002)

摘　　要：以纯度为99.99%氧化锌铝(w(Zn O)=98.00wt%,w(Al_2O_3)=2.00wt%)陶瓷靶为原料,利用直流磁控溅射法在普通白玻璃衬底上制备铝掺杂氧化锌(AZO)薄膜。利用X射线衍射仪(XRD)、扫描电镜(SEM)、四点探针测试仪和紫外可见光分光光度计等对薄膜的形貌、结构及光电性能进行分析。结果表明:薄膜具有c轴择优取向。随沉积温度升高,薄膜的结晶度先提高后下降,晶粒尺寸逐渐减小。当沉积温度为200℃时,可获得晶粒尺寸为18.30 nm、电阻率为4.1×10^(-3)Ω·cm、透过率为93.80%的AZO透明导电薄膜。AZO thin films on ordinary white glass substrate were deposited by DC magnetron sputtering with 99.99% zinc oxide aluminum（w（ZnO）=98.00wt%, w（A1203）=2.00wt% ） as raw material.The morphology, structure and transparent conductive properties of AZO thin films were analyzed by scanning electron microscope （SEM）, X-ray diffraction （XRD）, four-point probe tester and ultraviolet-visible spectrophotometer. The results show that the films are c-axis preferred orientation. With deposition temperature increasing, the crystallinity of the film increases firstly and then decreases, while the grain size decreases gradually. When the deposition temperature is 200℃, AZO films with the grain size of 18.30 nm, resistance of 4.1×10^3Ω·cm and transmittance of 93.80% can be obtained.

关 键 词：透明导电 AZO薄膜 磁控溅射 沉积温度 

分 类 号：TB383[一般工业技术—材料科学与工程]