张应变和N型掺杂对锗能带结构的调节  

Adjusting Ge band structure through tensile strain and N-type doping

作　　者：周志文[1] 郭海根[2] 李世国[1] 沈晓霞[1] 王颖[1] 

机构地区：[1]深圳信息职业技术学院电子与通信学院,广东深圳518172 [2]深圳信息职业技术学院离退休工作委员会办公室,广东深圳518172

出　　处：《深圳信息职业技术学院学报》2017年第3期59-63,共5页Journal of Shenzhen Institute of Information Technology

基　　金：广东省高等学校优秀青年教师项目(Yq2014123)

摘　　要：基于体锗的能带结构,从理论上计算分析了张应变和N型掺杂对锗能带结构的调节。张应变使价带和导带的能级分裂、偏移,N型掺杂使费米能级偏移,从而将锗调节为准直接带隙材料。当单独引入0.018的张应变时,锗变为准直接带隙,直接带隙为0.53 e V。当单独掺杂N型杂质9.5×1019cm-3时,锗的费米能级到达Γ带底。引入适量的张应变和N型掺杂浓度,既有利于锗能带结构的调节,又有利于材料的实际制备。研究结果为锗发光器件的设计和制作提供借鉴。Based on the band structure of bulk Ge, the adjustment of Ge band structure through tensile strain and N-type doping was theoretically calculated and analyzed. Valance bands and conduction bands were splitted and shifted due to the tensile strain. While, the Fermi energy level was moved by N-type doping. These adjust Ge into a pseudo direct band gap material. By introducing a tensile strain of 0.018 alone, the Ge band structure was changed to be direct with a direct band gap of 0.53 eV. With doping a N-type dopant concentration of 9.5 X 1019cm-3 alone, Fermi energy level was shifted to the bottom of F band. It is beneficial to adjusting the Ge band structure and fabrication of these materials practically by introducing proper tensile strain and N-type doping. The results provide reference to the design and fabrication of Ge-based light emitting devices.

关 键 词：锗 张应变 N型掺杂 能带 发光器件 

分 类 号：TN304.1[电子电信—物理电子学]