无氧化剂条件下铜钴CMP去除速率的控制  

Removal Rate Control for Copper and Cobalt CMP Free of Oxidizing Agent

作　　者：张文倩 刘玉岭 王辰伟 牛新环 杜义琛 季军 韩丽楠 Zhang Wenqian;Liu Yuling;Wang Chenwei;Niu Xinhuan;Du Yichen;Ji Jun;Han Linan(School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300130, China;Tianjin Key Laboratory of Electronic Materials and Devices, Tianjin 300130, China)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]天津市电子材料与器件重点实验室,天津300130

出　　处：《微纳电子技术》2018年第1期57-62,共6页Micronanoelectronic Technology

基　　金：国家中长期科技发展规划02科技重大专项资助项目(2016ZX02301003-004-007);河北省青年自然科学基金资助项目(F2015202267);天津市自然科学基金资助项目(16JCYBJC16100);河北省研究生创新资助项目(220056)

摘　　要：利用不含氧化剂的碱性抛光液对铜和钴进行化学机械抛光,深入分析了抛光液组分包括硅溶胶磨料、FA/O螯合剂以及非离子表面活性剂对两种金属去除速率的影响规律及作用机理。实验结果表明,铜和钴的去除速率随着磨料质量分数的增加而升高,并且在磨料质量分数低于5%时钴的去除速率为20~30 nm/min,而铜的去除速率几乎为零;加入FA/O螯合剂可增强其与金属离子的络合,从而加快铜和钴的去除速率;非离子表面活性剂可以有效降低铜和钴的表面粗糙度。在抛光液各组分的协同作用下,可以达到两种材料的低表面粗糙度和高去除速率选择性。Copper and cobalt were polished using the alkaline slurry free of oxidizing agent,and the effects and mechanisms of slurry components including silica sol abrasive,FA/O chelating agent and nonionic surfactant on the removal rates of the two metals were analyzed. The experimental results show that the removal rates of copper and cobalt increase with the increase of the mass fraction of the abrasive.When the abrasive mass fraction is less than 5%,the removal rate of cobalt is 20-30 nm/min while the copper removal rate maintains almost zero. Adding FA/O chelating agent to enhance the complexation with metal ions,the removal rates of copper and cobalt are accelerated. The surface roughnesses of copper and cobalt are effectively reduced under the action of the non-ionic surfactant. Under the synergistic effect of individual component of the slurry,low surface roughness and high removal rate selectivity of the two metals can be achieved.

关 键 词：阻挡层 化学机械抛光(CMP) 钴 去除速率 碱性抛光液 表面粗糙度 

分 类 号：TN305.2[电子电信—物理电子学]