InAlGaN超薄势垒层结构高频GaN HEMT器件  

High Frequency GaN HEMT with Ultrathin InAlGaN Barrier Layer

作　　者：朱广润 孔月婵[1] 张凯[1] 郁鑫鑫[1] 陈堂胜[1] 

机构地区：[1]南京电子器件研究所微波毫米波单片集成和模块电路重点实验室,南京210016

出　　处：《固体电子学研究与进展》2017年第5期299-302,共4页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(61474101;61504125)

摘　　要：提出了一种基于SiC衬底的高性能InAlGaN/AlN/GaN HEMT器件。采用电子束技术实现栅长为80nm的高深宽比(栅脚高度与栅长的比值)T型栅结构。测试结果表明,超薄势垒层结构对于器件短沟道效应具有较好的抑制作用,在Ids=1mA/mm时器件的DIBL=165mV/V,栅压为2V时饱和电流密度达到1.81A/mm,器件峰值跨导达到0.68S/mm。此外,器件还显示出优异的微波性能,电流增益截止频率f_T=238GHz,功率增益截止频率f_(max)=298GHz,有效载流子速度1.2×10~7 cm/s。报道的高频率性能显示出新型势垒层结构在高频短沟道器件领域的独特优势和深厚潜力。A type of high-performance GaN HEMTs with InA1GaN ultrathin harrier based on SiC suhstrate was presented. An 80 nm T-shaped gate with high aspect ratio （the ratio of gate height to gate length） was defined using e-beam lithography. The measurement results indicate that the short channel effect is effectively suppressed by the employment of the ultrathin barrier. The DIBL of such HEMT device is 165 mV/V at Ias = 1 mA/mm, and the saturated drain cur- rent density reaches up to 1.81 A/ram with a high peak extrinsic transconductance of 0. 68 S/ram at V~, = 2 V. Furthermore, the device shows good microwave performance with a high current- gain cutoff frequency fT Of 238 GHz, a high power-gain cutoff frequency fmax of 298 GHz, and an effective carrier velocity of 1.2）〈 107 cm/s. The obtained excellent frequency performance of the devices demonstrates distinct advantages and great potential of the ultrathin barrier layer for the RF short channel HEMTs application.

关 键 词：InAlGaN GAN 高频 高电子迁移率晶体管 

分 类 号：TN325.3[电子电信—物理电子学]