快速恢复外延二极管用150mm高均匀性硅外延材料的制备  

The Preparation of 150mm High Uniform Silicon Epitaxial Material for Fast Recovery Epitaxial Diode Application

作　　者：李明达[1] 李普生[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《固体电子学研究与进展》2017年第5期366-374,共9页Research & Progress of SSE

摘　　要：利用PE3061D型平板式外延炉,在150mm的重掺As的硅单晶衬底上采用化学气相沉积(CVD)方法制备参数可控且高均匀性的外延层,通过聚光灯、原子力显微镜(AFM)、傅里叶变换红外光谱仪(FT-IR)、汞探针电容-电压测试仪(Hg CV)等测试设备分别研究了外延层的表面形貌、微粗糙度、厚度、电阻率以及均匀性参数。采用了基座浅层包硅技术、周期性滞留层杂质稀释技术、高温快速二次本征生长技术、温场流场调控技术等新型工艺技术,使外延层厚度满足(15±2%)μm,电阻率满足(15±2%)Ω·cm的设计要求,片内厚度和电阻率不均匀性达到<2%的水平。制备的硅外延材料应用于FRED的试产,击穿电压高于125V,晶圆的成品率达到90%以上,满足了120VFRED器件使用要求,实现了自主可控。A high uniformity silicon epitaxial layer on 150 mm As-doped silicon substrate was grown by using PE3061D planar chemical vapor deposition reactor. The surface morphology, microroughness, resistivity, thickness as well as uniformity of the epilayers were measured by the spotlight, atomic force microscope （AFM）, Fourier transform infrared spectrometer （FT-IR）, and automatic mercury probe CV measuring system （Hg CV）, respectively. Several new growth technologies were employed, such as shallow layer coating, periodic boundary layer impurity dilution, intrinsic layer high temperature rapidly secondary-growth, and temperature field and flow field regulation technology. The epilayer＇s thickness is 15 μm with an inter-wafer nonuniformity of ±2%, the resistivity is 15 Ω · cm with an inter-wafer nonuniformity of ±2%, and the intrawafer thickness and resistivity nonuniformity are also less than 2%. The fast recovery epitaxial diodes （FRED） fabricated on the silicon epitaxial wafers show a breakdown voltage higher than 125 V and waferrs yield more than 90%, satisfying the requirements of 120 V FRED for the first time in domestic.

关 键 词：硅外延材料 均匀性 化学气相沉积 快速恢复外延二极管 

分 类 号：TN304.054[电子电信—物理电子学]